Single FETs, MOSFETs

Results: 4
Manufacturer
Littelfuse Inc.STMicroelectronics
Series
HiPerFET™, PolarMDmesh™ II PlusSTripFET™ IISuperMESH™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
60 V600 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)3.5A (Tc)14A (Tc)60A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 30A, 10V550mOhm @ 7A, 10V1.4Ohm @ 1.7A, 10V3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.5V @ 50µA5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 10 V11.8 nC @ 10 V36 nC @ 10 V73 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
211 pF @ 100 V311 pF @ 25 V1660 pF @ 25 V2500 pF @ 25 V
Power Dissipation (Max)
45W (Tc)110W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DPAKTO-220TO-247AD (IXFH)
Package / Case
TO-220-3TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
STP60NF06
MOSFET N-CH 60V 60A TO220AB
STMicroelectronics
1,683
In Stock
1 : ¥13.96000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
10V
16mOhm @ 30A, 10V
4V @ 250µA
73 nC @ 10 V
±20V
1660 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
MFG_DPAK(TO252-3)
STD5N60M2
MOSFET N-CH 600V 3.5A DPAK
STMicroelectronics
2,450
In Stock
1 : ¥9.77000
Cut Tape (CT)
2,500 : ¥4.04070
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.5A (Tc)
10V
1.4Ohm @ 1.7A, 10V
4V @ 250µA
8.5 nC @ 10 V
±25V
211 pF @ 100 V
-
45W (Tc)
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
STP3NK60Z
MOSFET N-CH 600V 2.4A TO220AB
STMicroelectronics
4,876
In Stock
1 : ¥12.40000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
2.4A (Tc)
10V
3.6Ohm @ 1.2A, 10V
4.5V @ 50µA
11.8 nC @ 10 V
±30V
311 pF @ 25 V
-
45W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-247_IXFH
IXFH14N60P
MOSFET N-CH 600V 14A TO247AD
Littelfuse Inc.
19
In Stock
1 : ¥48.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V
550mOhm @ 7A, 10V
5.5V @ 2.5mA
36 nC @ 10 V
±30V
2500 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.