Single FETs, MOSFETs

Results: 3
Series
-HEXFET®
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
250 V300 V
Current - Continuous Drain (Id) @ 25°C
57A (Tc)70A (Tc)93A (Tc)
Rds On (Max) @ Id, Vgs
17.5mOhm @ 56A, 10V32mOhm @ 42A, 10V33mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V270 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
5860 pF @ 25 V10774 pF @ 50 V10880 pF @ 50 V
Power Dissipation (Max)
360W (Tc)517W (Tc)520W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AC EP
IRFP4868PBF
MOSFET N-CH 300V 70A TO247AC
Infineon Technologies
1,159
In Stock
1 : ¥58.95000
Tube
-
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
300 V
70A (Tc)
10V
32mOhm @ 42A, 10V
5V @ 250µA
270 nC @ 10 V
±20V
10774 pF @ 50 V
-
517W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRFP4332PBF
MOSFET N-CH 250V 57A TO247AC
Infineon Technologies
344
In Stock
1 : ¥39.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
57A (Tc)
10V
33mOhm @ 35A, 10V
5V @ 250µA
150 nC @ 10 V
±30V
5860 pF @ 25 V
-
360W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRFP4768PBF
MOSFET N-CH 250V 93A TO247AC
Infineon Technologies
2,612
In Stock
1 : ¥63.13000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
93A (Tc)
10V
17.5mOhm @ 56A, 10V
5V @ 250µA
270 nC @ 10 V
±20V
10880 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.