Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IMBG120R234M2HXTMA1 SIC DISCRETE Infineon Technologies	197 In Stock	1 : ¥49.26000 Cut Tape (CT) 1,000 : ¥25.45417 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	8.1A (Tc)	15V, 18V	233.9mOhm @ 3A, 18V	5.1V @ 900µA	7.9 nC @ 18 V	+20V, -7V	290 pF @ 800 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMW120R220M1HXKSA1 SICFET N-CH 1.2KV 13A TO247-3 Infineon Technologies	1,242 In Stock	1 : ¥54.60000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	13A (Tc)	15V, 18V	286mOhm @ 4A, 18V	5.7V @ 1.6mA	8.5 nC @ 18 V	+23V, -7V	289 pF @ 800 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IMBG120R078M2HXTMA1 SIC DISCRETE Infineon Technologies	781 In Stock	1 : ¥67.07000 Cut Tape (CT) 1,000 : ¥38.03520 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	29A (Tc)	15V, 18V	78.1mOhm @ 8.9A, 18V	5.1V @ 2.8mA	20.6 nC @ 18 V	+23V, -10V	700 pF @ 800 V	-	158W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R053M2HXTMA1 SIC DISCRETE Infineon Technologies	801 In Stock	1 : ¥84.15000 Cut Tape (CT) 1,000 : ¥47.71916 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V, 18V	52.6mOhm @ 13.2A, 18V	5.1V @ 4.1mA	30 nC @ 18 V	+23V, -10V	1010 pF @ 800 V	-	205W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R022M2HXTMA1 SIC DISCRETE Infineon Technologies	888 In Stock	1 : ¥171.01000 Cut Tape (CT) 1,000 : ¥108.28396 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	87A (Tc)	15V, 18V	21.6mOhm @ 32.1A, 18V	5.1V @ 10.1mA	71 nC @ 18 V	+23V, -10V	2330 pF @ 800 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R017M2HXTMA1 SIC DISCRETE Infineon Technologies	862 In Stock	1 : ¥189.89000 Cut Tape (CT) 1,000 : ¥123.95688 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	107A (Tc)	15V, 18V	17.1mOhm @ 40.4A, 18V	5.1V @ 12.7mA	89 nC @ 18 V	+23V, -10V	2910 pF @ 800 V	-	470W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R350MT12J-TR 1200V 350M TO-263-7 G3R SIC MOSF GeneSiC Semiconductor	699 In Stock	1 : ¥45.24000 Cut Tape (CT) 800 : ¥33.24991 Tape & Reel (TR)	G3R™, LoRing™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	10A (Tc)	15V, 18V	395mOhm @ 4A, 18V	2.7V @ 2mA	10 nC @ 15 V	+22V, -10V	331 pF @ 800 V	-	64W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R116M2HXTMA1 SIC DISCRETE Infineon Technologies	958 In Stock	1 : ¥57.80000 Cut Tape (CT) 1,000 : ¥32.79300 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21.2A (Tc)	15V, 18V	115.7mOhm @ 6A, 18V	5.1V @ 1.9mA	14.4 nC @ 18 V	+23V, -10V	500 pF @ 800 V	-	123W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R026M2HXTMA1 SIC DISCRETE Infineon Technologies	975 In Stock	1 : ¥131.60000 Cut Tape (CT) 1,000 : ¥83.34479 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	75A (Tc)	15V, 18V	25.4mOhm @ 27.3A, 18V	5.1V @ 8.6mA	60 nC @ 18 V	+23V, -10V	1990 pF @ 800 V	-	335W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R008M2HXTMA1 SIC DISCRETE Infineon Technologies	0 In Stock Check Lead Time	1 : ¥400.80000 Cut Tape (CT) 1,000 : ¥277.63137 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	189A (Tc)	15V, 18V	7.7mOhm @ 89.9A, 18V	5.1V @ 28.3mA	195 nC @ 18 V	+23V, -10V	6380 pF @ 800 V	-	800W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.