Single FETs, MOSFETs

Results: 5
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon TechnologiesonsemiTaiwan Semiconductor CorporationUMW
Series
-AlphaSGT™HEXFET®PowerTrench®UMW
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time BuyNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V600 V
Current - Continuous Drain (Id) @ 25°C
1A (Tj)2.8A (Tc)6.3A (Ta)33A (Ta), 69A (Tc)86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 20A, 10V5.8mOhm @ 25A, 10V25mOhm @ 6.3A, 10V130mOhm @ 2.8A, 4.5V11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.35V @ 50µA2.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 4.5 V4.8 nC @ 10 V15 nC @ 10 V23 nC @ 4.5 V50 nC @ 10 V
Vgs (Max)
±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V480 pF @ 15 V570 pF @ 15 V2150 pF @ 15 V2575 pF @ 20 V
Power Dissipation (Max)
700mW (Ta)1.6W (Ta)6.2W (Ta), 73.5W (Tc)75W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SOT-223SOT-23SuperSOT™-6TO-252AA (DPAK)UltraSO-8™
Package / Case
3-PowerSMD, Flat LeadsSOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SG6858TZ
FDC655BN
MOSFET N-CH 30V 6.3A SUPERSOT6
onsemi
34,348
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.27931
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.3A (Ta)
4.5V, 10V
25mOhm @ 6.3A, 10V
3V @ 250µA
15 nC @ 10 V
±20V
570 pF @ 15 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
MFG_TO-236-3,-SC-59,-SOT-23-3
TSM2301ACX RFG
MOSFET P-CHANNEL 20V 2.8A SOT23
Taiwan Semiconductor Corporation
191,398
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43343
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Tc)
2.5V, 4.5V
130mOhm @ 2.8A, 4.5V
1V @ 250µA
4.5 nC @ 4.5 V
±12V
480 pF @ 15 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TO252-3
IRLR8726TRPBF
MOSFET N-CH 30V 86A DPAK
Infineon Technologies
17,723
In Stock
1 : ¥5.09000
Cut Tape (CT)
2,000 : ¥1.70863
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
86A (Tc)
4.5V, 10V
5.8mOhm @ 25A, 10V
2.35V @ 50µA
23 nC @ 4.5 V
±20V
2150 pF @ 15 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
UltraSO-8
AOUS66416
MOSFET N-CH 40V 33A/69A ULTRASO8
Alpha & Omega Semiconductor Inc.
2,999
In Stock
1 : ¥10.84000
Cut Tape (CT)
3,000 : ¥4.48212
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Ta), 69A (Tc)
4.5V, 10V
3.3mOhm @ 20A, 10V
2.5V @ 250µA
50 nC @ 10 V
±20V
2575 pF @ 20 V
-
6.2W (Ta), 73.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
UltraSO-8™
3-PowerSMD, Flat Leads
1N60G
1N60G
SOT-223 N-CHANNEL POWER MOSFETS
UMW
2,420
In Stock
1 : ¥7.06000
Cut Tape (CT)
2,500 : ¥1.56776
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
1A (Tj)
10V
11Ohm @ 500mA, 10V
4V @ 250µA
4.8 nC @ 10 V
±30V
150 pF @ 25 V
-
-
150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.