Single Bipolar Transistors

Results: 6
Manufacturer
onsemiSTMicroelectronics
Product Status
ActiveObsolete
Current - Collector (Ic) (Max)
1 A3 A4 A6 A8 A15 A
Voltage - Collector Emitter Breakdown (Max)
60 V120 V400 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A1V @ 100mA, 1A1V @ 1A, 4A1V @ 200mA, 2A2V @ 2A, 8A3.5V @ 5A, 15A
Current - Collector Cutoff (Max)
100µA100µA (ICBO)300µA1mA1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A, 5V8 @ 5A, 5V15 @ 1A, 4V20 @ 5A, 4V120 @ 1A, 5V150 @ 500mA, 5V
Power - Max
1.8 W2 W25 W40 W75 W80 W
Frequency - Transition
3MHz5MHz10MHz-
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-220-3TO-220-3 Full Pack
Supplier Device Package
TO-220TO-220-3TO-220F-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
ST13005
TRANS NPN 400V 4A TO220
STMicroelectronics
2,854
In Stock
1 : ¥6.16000
Tube
-
Tube
Active
NPN
4 A
400 V
1V @ 1A, 4A
1mA
8 @ 2A, 5V
75 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
2N6487G
TRANS NPN 60V 15A TO220
onsemi
346
In Stock
1 : ¥8.13000
Tube
-
Tube
Active
NPN
15 A
60 V
3.5V @ 5A, 15A
1mA
20 @ 5A, 4V
1.8 W
5MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
ST13007D
TRANS NPN 400V 8A TO220
STMicroelectronics
6,948
In Stock
1 : ¥9.44000
Tube
-
Tube
Active
NPN
8 A
400 V
2V @ 2A, 8A
100µA
8 @ 5A, 5V
80 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP29AG
TRANS NPN 60V 1A TO220
onsemi
545
In Stock
1 : ¥8.37000
Tube
-
Tube
Active
NPN
1 A
60 V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
KSD363YTU
TRANS NPN 120V 6A TO220-3
onsemi
2,000
In Stock
1 : ¥12.40000
Tube
-
Tube
Obsolete
NPN
6 A
120 V
1V @ 100mA, 1A
1mA (ICBO)
120 @ 1A, 5V
40 W
10MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220F
KSD2012GTU
TRANS NPN 60V 3A TO220F-3
onsemi
239
In Stock
1 : ¥7.96000
Tube
-
Tube
Active
NPN
3 A
60 V
1V @ 200mA, 2A
100µA (ICBO)
150 @ 500mA, 5V
25 W
3MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3
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of 6

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.