Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IXYX30N170CV1 IGBT 1700V 108A PLUS247-3 IXYS	119 In Stock	1 : ¥198.18000 Tube	XPT™	Tube	Active	-	1700 V	108 A	255 A	3.7V @ 15V, 30A	937 W	5.9mJ (on), 3.3mJ (off)	Standard	140 nC	28ns/150ns	850V, 30A, 2.7Ohm, 15V	160 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3 Variant	PLUS247™-3
IXYH16N170C IGBT 1.7KV 40A TO247 IXYS	1,221 In Stock 870 Factory	1 : ¥74.46000 Tube	XPT™	Tube	Active	-	1700 V	40 A	100 A	3.8V @ 15V, 16A	310 W	2.1mJ (on), 1.5mJ (off)	Standard	56 nC	11ns/140ns	850V, 16A, 10Ohm, 15V	19 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
IXYH24N170CV1 IGBT 1.7KV 58A TO247 IXYS	292 In Stock	1 : ¥109.85000 Tube	XPT™	Tube	Active	-	1700 V	58 A	140 A	4V @ 15V, 24A	500 W	3.6mJ (on), 1.76mJ (off)	Standard	96 nC	16ns/155ns	850V, 24A, 5Ohm, 15V	170 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXYH)
IXYH30N170C 1700V/108A HIGH VOLTAGE XPT IGB IXYS	0 In Stock 690 Factory Check Lead Time	30 : ¥97.14933 Tube	XPT™	Tube	Active	-	1700 V	108 A	255 A	3.7V @ 15V, 30A	937 W	5.9mJ (on), 3.3mJ (off)	Standard	140 nC	28ns/150ns	850V, 30A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.