Single FETs, MOSFETs

Results: 6
Series
-AlphaSGT™
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)15A (Ta), 70A (Tc)16.5A (Ta), 58A (Tc)19A (Ta)20A (Ta), 58A (Tc)22A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V8V, 10V10V10V, 20V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 20A, 10V6.7mOhm @ 20A, 20V8.5mOhm @ 20A, 10V9.5mOhm @ 20A, 10V11mOhm @ 20A, 10V4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA2.6V @ 250µA3.5V @ 250µA3.6V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V13 nC @ 4.5 V25 nC @ 10 V35 nC @ 10 V65 nC @ 10 V66 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 25 V1070 pF @ 30 V1100 pF @ 30 V1725 pF @ 50 V2760 pF @ 15 V3420 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta), 90W (Tc)6.2W (Ta), 156W (Tc)6.2W (Ta), 52W (Tc)6.2W (Ta), 73W (Tc)57W (Tc)59.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-251
AOY66923
MOSFET N-CH 100V 16.5/58A TO251B
Alpha & Omega Semiconductor Inc.
5,807
In Stock
1 : ¥7.06000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
16.5A (Ta), 58A (Tc)
4.5V, 10V
11mOhm @ 20A, 10V
2.6V @ 250µA
35 nC @ 10 V
±20V
1725 pF @ 50 V
-
6.2W (Ta), 73W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
0
In Stock
3,500 : ¥2.04417
Tube
-
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
2A (Tc)
10V
4.7Ohm @ 1A, 10V
4.5V @ 250µA
11 nC @ 10 V
±30V
295 pF @ 25 V
-
57W (Tc)
-50°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
MOSFET N-CHANNEL 60V 19A TO251B
AOY2610E
MOSFET N-CHANNEL 60V 19A TO251B
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
3,500 : ¥2.81221
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
19A (Ta)
4.5V, 10V
9.5mOhm @ 20A, 10V
2.4V @ 250µA
13 nC @ 4.5 V
±20V
1100 pF @ 30 V
-
59.5W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
TO-251
AOY423
MOSFET P-CH 30V 15A/70A TO251B
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
3,500 : ¥2.88309
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta), 70A (Tc)
10V, 20V
6.7mOhm @ 20A, 20V
3.5V @ 250µA
65 nC @ 10 V
±25V
2760 pF @ 15 V
-
2.5W (Ta), 90W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
0
In Stock
Check Lead Time
3,500 : ¥3.34329
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
20A (Ta), 58A (Tc)
8V, 10V
8.5mOhm @ 20A, 10V
3.6V @ 250µA
25 nC @ 10 V
±20V
1070 pF @ 30 V
-
6.2W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
0
In Stock
Check Lead Time
3,500 : ¥5.32837
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
22A (Ta), 70A (Tc)
4.5V, 10V
6.5mOhm @ 20A, 10V
2.6V @ 250µA
66 nC @ 10 V
±20V
3420 pF @ 50 V
-
6.2W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPAK
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.