FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FDS6890A MOSFET 2N-CH 20V 7.5A 8SOIC onsemi	14,127 In Stock 7,500 Factory	1 : ¥12.31000 Cut Tape (CT) 2,500 : ¥5.08312 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	7.5A	18mOhm @ 7.5A, 4.5V	1.5V @ 250µA	32nC @ 4.5V	2130pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
HP8KA1TB MOSFET 2N-CH 30V 14A 8HSOP Rohm Semiconductor	2,500 In Stock	1 : ¥9.61000 Cut Tape (CT) 2,500 : ¥3.60207 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	14A	5mOhm @ 14A, 10V	2.5V @ 10mA	24nC @ 4.5V	2550pF @ 15V	3W	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
AO4884 MOSFET 2N-CH 40V 10A 8SOIC Alpha & Omega Semiconductor Inc.	0 In Stock Check Lead Time	3,000 : ¥3.01070 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	40V	10A	13mOhm @ 10A, 10V	2.7V @ 250µA	33nC @ 10V	1950pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.