Single FETs, MOSFETs

Results: 6
Manufacturer
Goford SemiconductorInfineon TechnologiesonsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™PowerTrench®TrenchFET®U-MOSIX-H
Product Status
ActiveDiscontinued at Digi-Key
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)120A (Tc)150A (Tc)222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V7.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V2.4mOhm @ 30A, 10V2.9mOhm @ 50A, 10V4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA3.8V @ 270µA4V @ 250µA4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V152 nC @ 10 V161 nC @ 10 V210 nC @ 10 V227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4198 pF @ 50 V9500 pF @ 50 V10680 pF @ 40 V11180 pF @ 50 V15600 pF @ 50 V
Power Dissipation (Max)
45W (Tc)156W (Tc)214W (Tc)306W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Supplier Device Package
PG-TO220-3TO-220TO-220-3TO-220ABTO-220F
Package / Case
TO-220-3TO-220-3 Full Pack
Stocking Options
Environmental Options
Media
Marketplace Product
6Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
488-TO-220AB
FDP2D3N10C
MOSFET N-CH 100V 222A TO220-3
onsemi
186
In Stock
162,400
Factory
1 : ¥50.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
222A (Tc)
10V
2.3mOhm @ 100A, 10V
4V @ 700µA
152 nC @ 10 V
±20V
11180 pF @ 50 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220F
FDPF2D3N10C
MOSFET N-CH 100V 222A TO220F
onsemi
1,019
In Stock
3,000
Factory
1 : ¥54.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
222A (Tc)
10V
2.3mOhm @ 100A, 10V
4V @ 700µA
152 nC @ 10 V
±20V
11180 pF @ 50 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
PB-F POWER MOSFET TRANSISTOR TO-
TK2R9E10PL,S1X
PB-F POWER MOSFET TRANSISTOR TO-
Toshiba Semiconductor and Storage
100
In Stock
1 : ¥28.73000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Ta)
4.5V, 10V
2.9mOhm @ 50A, 10V
2.5V @ 1mA
161 nC @ 10 V
±20V
9500 pF @ 50 V
-
306W (Tc)
175°C
Through Hole
TO-220
TO-220-3
GT52N10T
GT045N10T
N100V, 150A,RD<4.8M@10V,VTH2V~4V
Goford Semiconductor
63
In Stock
1 : ¥14.45000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
150A (Tc)
10V
4.8mOhm @ 20A, 10V
4V @ 250µA
73 nC @ 10 V
±20V
4198 pF @ 50 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220AB
SUP60020E-GE3
MOSFET N-CH 80V 150A TO220AB
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥24.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
7.5V, 10V
2.4mOhm @ 30A, 10V
4V @ 250µA
227 nC @ 10 V
±20V
10680 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IPP023N10N5AKSA1
MOSFET N-CH 100V 120A TO220-3
Infineon Technologies
0
In Stock
50 : ¥43.09160
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
6V, 10V
2.3mOhm @ 100A, 10V
3.8V @ 270µA
210 nC @ 10 V
±20V
15600 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.