FET, MOSFET Arrays

Results: 3
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel2 N-Channel (Dual)
FET Feature
-Logic Level GateLogic Level Gate, 2.5V Drive
Current - Continuous Drain (Id) @ 25°C
1A (Ta)3.4A (Ta)3.5A
Rds On (Max) @ Id, Vgs
60mOhm @ 3.1A, 10V238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 1mA1.8V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4nC @ 4.5V4.1nC @ 4.5V6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
77pF @ 10V278pF @ 15V305pF @ 15V
Power - Max
840mW880mW900mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
TSMT6 (SC-95)TSOT-26
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TSOT-26
DMN3135LVT-7
MOSFET 2N-CH 30V 3.5A TSOT26
Diodes Incorporated
61,097
In Stock
54,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.21522
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
3.5A
60mOhm @ 3.1A, 10V
2.2V @ 250µA
4.1nC @ 4.5V
305pF @ 15V
840mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
TSMT6_TSMT6 Pkg
QS6K1FRATR
MOSFET 2N-CH 30V 1A TSMT6
Rohm Semiconductor
12,852
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.55986
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate, 2.5V Drive
30V
1A (Ta)
238mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
900mW (Tc)
150°C
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
TSOT-26
DMN3061SVTQ-13
MOSFET 2N-CH 30V 3.4A TSOT26
Diodes Incorporated
0
In Stock
Check Lead Time
10,000 : ¥0.72080
Bulk
-
Bulk
Active
MOSFET (Metal Oxide)
2 N-Channel
-
30V
3.4A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
6.6nC @ 10V
278pF @ 15V
880mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
Showing
of 3

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.