Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

R6024VNXC7G 600V 13A TO-220FM, PRESTOMOS WIT Rohm Semiconductor	1,070 In Stock	1 : ¥27.50000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V, 15V	153mOhm @ 6A, 15V	6.5V @ 700µA	38 nC @ 10 V	±30V	1800 pF @ 100 V	-	70W (Tc)	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6024VNX3C16 600V 24A TO-220AB, PRESTOMOS WIT Rohm Semiconductor	1,055 In Stock	1 : ¥31.36000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V, 15V	153mOhm @ 6A, 15V	6.5V @ 700µA	38 nC @ 10 V	±30V	1800 pF @ 100 V	-	245W (Tc)	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
R6035VNXC7G 600V 17A TO-220FM, PRESTOMOS WIT Rohm Semiconductor	1,046 In Stock	1 : ¥32.26000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	17A (Tc)	10V, 15V	114mOhm @ 8A, 15V	6.5V @ 1.1mA	50 nC @ 10 V	±30V	2400 pF @ 100 V	-	81W (Tc)	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.