Single FETs, MOSFETs

Results: 16
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
-N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)45A (Tc)46A (Tc)50A (Tc)58A (Tc)70A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V18V
Rds On (Max) @ Id, Vgs
40.9mOhm @ 25.6A, 18V42mOhm @ 29.5A, 18V50mOhm @ 25A, 18V64mOhm @ 20.1A, 18V74mOhm @ 16.7A, 18V-
Vgs(th) (Max) @ Id
5.2V @ 11mA5.7V @ 5mA5.7V @ 6mA5.7V @ 7.5mA5.7V @ 8.8mA-
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V33 nC @ 18 V41 nC @ 18 V48 nC @ 18 V68 nC @ 18 V
Vgs (Max)
+20V, -2V+20V, -7V+23V, -5V-
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V1118 pF @ 400 V1393 pF @ 400 V1643 pF @ 400 V2160 pF @ 800 V
Power Dissipation (Max)
125W (Tc)161W (Tc)176W (Tc)183W (Tc)197W (Tc)273W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8-2PG-TO247-3-41PG-TO247-4-3PG-TO247-4-U02PG-TO263-7-12
Package / Case
8-PowerSFNTO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
16Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IMZA65R048M1HXKSA1
IMZA65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
435
In Stock
1 : ¥61.08000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
IMBG65R048M1HXTMA1
IMBG65R048M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
889
In Stock
1 : ¥83.49000
Cut Tape (CT)
1,000 : ¥47.37106
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
183W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMW65R030M1HXKSA1
IMW65R030M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
245
In Stock
1 : ¥109.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
58A (Tc)
18V
42mOhm @ 29.5A, 18V
5.7V @ 8.8mA
48 nC @ 18 V
+20V, -2V
1643 pF @ 400 V
-
197W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMW65R039M1HXKSA1
IMW65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
258
In Stock
1 : ¥67.16000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
46A (Tc)
18V
50mOhm @ 25A, 18V
5.7V @ 7.5mA
41 nC @ 18 V
+20V, -2V
1393 pF @ 400 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IMBG65R048M1HXTMA1
IMBG65R057M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
896
In Stock
1 : ¥73.48000
Cut Tape (CT)
1,000 : ¥41.66435
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+23V, -5V
930 pF @ 400 V
-
161W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,935
In Stock
1 : ¥35.79000
Cut Tape (CT)
2,000 : ¥17.42043
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,594
In Stock
1 : ¥40.97000
Cut Tape (CT)
2,000 : ¥19.95229
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,933
In Stock
1 : ¥56.98000
Cut Tape (CT)
2,000 : ¥30.27095
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,994
In Stock
1 : ¥62.15000
Cut Tape (CT)
2,000 : ¥33.02858
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
2,000
In Stock
1 : ¥71.75000
Cut Tape (CT)
2,000 : ¥38.13159
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,971
In Stock
1 : ¥81.03000
Cut Tape (CT)
2,000 : ¥43.08149
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,998
In Stock
1 : ¥92.11000
Cut Tape (CT)
2,000 : ¥48.93869
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,934
In Stock
1 : ¥103.44000
Cut Tape (CT)
2,000 : ¥60.95062
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,931
In Stock
1 : ¥134.56000
Cut Tape (CT)
2,000 : ¥79.29030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-TO247-4-3
IMZA65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
91
In Stock
1 : ¥97.45000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
50A (Tc)
18V
50mOhm @ 25A, 18V
5.7V @ 7.5mA
41 nC @ 18 V
+20V, -2V
1393 pF @ 400 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
0
In Stock
Check Lead Time
1 : ¥144.33000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
70A (Tc)
15V, 18V
40.9mOhm @ 25.6A, 18V
5.2V @ 11mA
68 nC @ 18 V
+20V, -7V
2160 pF @ 800 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-U02
TO-247-4
Showing
of 16

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.