Single FETs, MOSFETs

Results: 9
Manufacturer
GeneSiC SemiconductorLittelfuse Inc.Microchip TechnologyonsemiRohm SemiconductorWolfspeed, Inc.
Series
-C3M™G3R™
Current - Continuous Drain (Id) @ 25°C
39A (Tc)54A (Tc)55A (Tc)58A (Tc)66A (Tc)71A (Tc)90A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V18V20V
Rds On (Max) @ Id, Vgs
32mOhm @ 50A, 20V36mOhm @ 50A, 15V48mOhm @ 35A, 15V50mOhm @ 40A, 20V52mOhm @ 20A, 18V53.5mOhm @ 33.3A, 15V54mOhm @ 20A, 18V56mOhm @ 35A, 20V100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.6V @ 2mA2.69V @ 10mA2.69V @ 12mA3.6V @ 9.2mA4V @ 10mA4V @ 30mA4.3V @ 10mA4.4V @ 10mA5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 18 V95 nC @ 20 V99 nC @ 15 V106 nC @ 15 V106 nC @ 20 V107 nC @ 18 V137 nC @ 20 V155 nC @ 15 V265 nC @ 20 V
Vgs (Max)
+15V, -4V±15V+22V, -10V+22V, -4V+22V, -6V+23V, -10V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
495 pF @ 800 V1337 pF @ 800 V1700 pF @ 800 V1762 pF @ 800 V1825 pF @ 800 V1990 pF @ 1000 V2900 pF @ 1000 V2929 pF @ 800 V3901 pF @ 800 V
Power Dissipation (Max)
179W (Tc)231W (Tc)262W319W (Tc)323W (Tc)326W (Tc)333W (Tc)400W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)175°C (TJ)
Supplier Device Package
TO-247-4TO-247-4LTO-247AD
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
9Results
Showing
of 9
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-4
NTH4L040N120SC1
SICFET N-CH 1200V 58A TO247-4
onsemi
0
In Stock
Check Lead Time
1 : ¥164.77000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
58A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1762 pF @ 800 V
-
319W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,479
In Stock
1 : ¥184.97000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
1,602
In Stock
1 : ¥221.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
2,390
In Stock
1 : ¥145.07000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
SCT4026DRHRC15
SCT3040KRC14
SICFET N-CH 1200V 55A TO247-4L
Rohm Semiconductor
818
In Stock
1 : ¥249.91000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
TO-247-4
MSC040SMA120B4
SICFET N-CH 1200V 66A TO247-4
Microchip Technology
173
In Stock
1 : ¥204.83000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
20V
50mOhm @ 40A, 20V
2.6V @ 2mA
137 nC @ 20 V
+23V, -10V
1990 pF @ 1000 V
-
323W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
TO-247-4
NTH4L040N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
439
In Stock
1 : ¥109.93000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
TO-247-3 AD Long Lead EP
LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥173.23000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
39A (Tc)
20V
100mOhm @ 20A, 20V
4V @ 10mA
95 nC @ 20 V
+22V, -6V
1825 pF @ 800 V
-
179W (Tc)
-55°C ~ 150°C
Through Hole
TO-247AD
TO-247-3
LSIC1MO120G0160
LSIC1MO120G0025
MOSFET SIC 1200V 70A TO247-4L
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥359.75000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
20V
32mOhm @ 50A, 20V
4V @ 30mA
265 nC @ 20 V
+22V, -6V
495 pF @ 800 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.