Single IGBTs

Results: 2
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
-PowerMESH™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
IGBT Type
-NPT
Voltage - Collector Emitter Breakdown (Max)
600 V1200 V
Current - Collector (Ic) (Max)
6.2 A15 A
Current - Collector Pulsed (Icm)
9.6 A21 A
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 3A3.6V @ 15V, 2A
Power - Max
56 W62 W
Switching Energy
20µJ (on), 68µJ (off)220µJ
Gate Charge
11 nC13.6 nC
Td (on/off) @ 25°C
12ns/76ns23ns/260ns
Test Condition
390V, 3A, 10Ohm, 15V800V, 2A, 91Ohm, 15V
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
DPAKPG-TO263-3-2
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
1,917
In Stock
1 : ¥11.33000
Cut Tape (CT)
2,500 : ¥4.69716
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
600 V
15 A
21 A
2.5V @ 15V, 3A
56 W
20µJ (on), 68µJ (off)
Standard
13.6 nC
12ns/76ns
390V, 3A, 10Ohm, 15V
21 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SGB02N120ATMA1
IGBT 1200V 6.2A 62W TO263-3
Infineon Technologies
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
NPT
1200 V
6.2 A
9.6 A
3.6V @ 15V, 2A
62 W
220µJ
Standard
11 nC
23ns/260ns
800V, 2A, 91Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
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of 2

Single IGBTs


Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.