JFETs

Results: 3
Manufacturer
Linear Integrated Systems, Inc.onsemi
Series
-LSK189SST4391
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Voltage - Breakdown (V(BR)GSS)
30 V40 V60 V
Drain to Source Voltage (Vdss)
30 V60 V
Current - Drain (Idss) @ Vds (Vgs=0)
2.5 mA @ 15 V5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id
500 mV @ 10 nA1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds
8pF @ 15V13pF @ 20V14pF @ 15V
Resistance - RDS(On)
30 Ohms100 Ohms
Power - Max
225 mW300 mW350 mW
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBF4393LT1G
JFET N-CH 30V SOT23-3
onsemi
28,879
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.76291
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
30 V
30 V
5 mA @ 15 V
-
500 mV @ 10 nA
14pF @ 15V
100 Ohms
225 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
4,338
In Stock
1 : ¥22.82000
Cut Tape (CT)
3,000 : ¥11.46937
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
40 V
-
-
-
-
13pF @ 20V
30 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
8,043
In Stock
1 : ¥55.25000
Cut Tape (CT)
3,000 : ¥30.87905
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
60 V
60 V
2.5 mA @ 15 V
10 mA
1.5 V @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
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of 3

JFETs


Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.