Goford Semiconductor Single FETs, MOSFETs

Results: 338
Series
-Cool MOS™GGTSGTTrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V15 V16 V20 V30 V40 V45 V60 V80 V85 V90 V100 V120 V150 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)1A (Tc)1.6A (Tc)1.7A (Tc)2A2A (Tc)2.2A (Tc)2.5A (Tc)2.8A (Tc)3A (Tc)3.4A (Tc)3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V2.5V, 4.5V2.5V, 4.5V, 10V4.5V4.5V, 10V5V, 10V10V-
Rds On (Max) @ Id, Vgs
1.3mOhm @ 20A, 10V1.5mOhm @ 30A, 10V1.6mOhm @ 10A, 10V1.6mOhm @ 15A, 10V1.7mOhm @ 30A, 10V1.9mOhm @ 80A, 10V2mOhm @ 20A, 10V2.2mOhm @ 20A, 10V2.3mOhm @ 50A, 10V2.5mOhm @ 20A, 10V2.5mOhm @ 30A, 10V2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA1.1V @ 250µA1.2V @ 250µA1.3V @ 250µA1.4V @ 250µA1.5V @ 250µA2V @ 250µA2.2V @ 250µA2.3V @ 250µA2.4V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V2.5 nC @ 10 V4 nC @ 10 V4.3 nC @ 10 V5 nC @ 10 V5.2 nC @ 10 V6 nC @ 4.5 V6.2 nC @ 10 V7.8 nC @ 4.5 V8 nC @ 10 V8.5 nC @ 4.5 V9.1 nC @ 4.5 V
Vgs (Max)
±8V±10V±12V±16V±18V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
68 pF @ 150 V190 pF @ 50 V206 pF @ 50 V209 pF @ 50 V212 pF @ 50 V230 pF @ 15 V247 pF @ 50 V250 pF @ 400 V253 pF @ 50 V255 pF @ 25 V300 pF @ 10 V387 pF @ 10 V
Power Dissipation (Max)
710mW (Tc)890mW (Tc)960mW1W (Tc)1.05W (Tc)1.2W (Tc)1.25W1.25W (Tc)1.3W1.3W (Tc)1.4W (Ta)1.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
6-DFN (2x2)8-DFN (3.15x3.05)8-DFN (4.9x5.75)8-SOP8-TSSOPSOT-223SOT-23SOT-23-3SOT-23-3LSOT-23-6LSOT-89TO-220
Package / Case
6-UDFN Exposed Pad6-WDFN Exposed Pad8-PowerSFN8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)8-TSSOP (0.173", 4.40mm Width)SOT-23-6TO-220-3TO-220-3 Full PackTO-236-3, SC-59, SOT-23-3TO-243AATO-247-3TO-251-3 Short Leads, IPAK, TO-251AA
Stocking Options
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Marketplace Product
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
2302
2301H
P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Goford Semiconductor
2,816
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.43980
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2.8A (Tc)
4.5V, 10V
75mOhm @ 3A, 10V
2.4V @ 250µA
12 nC @ 2.5 V
±20V
405 pF @ 10 V
-
890mW (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G500P03IE
G500P03IE
MOSFET P-CH ESD 30V 4.6A SOT-23
Goford Semiconductor
3,000
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.48134
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
MOSFET (Metal Oxide)
-
4.6A (Tc)
2.5V, 4.5V, 10V
55mOhm @ 4A, 10V
1.3V @ 250µA
13 nC @ 10 V
±12V
680 pF @ 15 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
-
2302
2300F
N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Goford Semiconductor
2,879
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.48134
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6A (Tc)
2.5V, 4.5V
27mOhm @ 2.3A, 4.5V
900mV @ 250µA
11 nC @ 4.5 V
±12V
630 pF @ 10 V
-
1.25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G2K3N10H
G1K1P06HH
P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Goford Semiconductor
4,443
In Stock
1 : ¥2.87000
Cut Tape (CT)
2,500 : ¥0.77862
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
4.5A (Tc)
10V
110mOhm @ 4A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
981 pF @ 30 V
-
3.1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
G3404LL
G350P02LLE
P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Goford Semiconductor
2,997
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.59365
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Tc)
1.8V, 4.5V
35mOhm @ 4A, 4.5V
1V @ 250µA
17.2 nC @ 10 V
±10V
1126 pF @ 10 V
-
1.4W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6L
SOT-23-6
G220P02D2
G220P02D2
P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Goford Semiconductor
2,990
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.77862
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
8A (Tc)
4.5V, 10V
20mOhm @ 6A, 10V
1.2V @ 250µA
14 nC @ 10 V
±12V
1873 pF @ 10 V
-
3.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-DFN (2x2)
6-UDFN Exposed Pad
G3404LL
G7K2N20LLE
N-PH,200V, ESD,2A,RD<0.7@10V,VTH
Goford Semiconductor
2,733
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.77862
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2A (Tc)
4.5V, 10V
700mOhm @ 1A, 10V
2.5V @ 250µA
10.8 nC @ 10 V
±20V
577 pF @ 100 V
-
1.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6L
SOT-23-6
2302
3400
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
Goford Semiconductor
4,587
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.53815
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.6A (Tc)
4.5V, 10V
59mOhm @ 2.8A, 2.5V
1.4V @ 250µA
9.5 nC @ 4.5 V
±12V
820 pF @ 15 V
-
1.4W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
2302
G250N03IE
N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Goford Semiconductor
2,580
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.52948
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.3A (Tc)
2.5V, 10V
25mOhm @ 4A, 10V
1.3V @ 250µA
9.1 nC @ 4.5 V
±10V
573 pF @ 15 V
-
1.4W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6L
SOT-23-6
2302
2301
P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Goford Semiconductor
9,916
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54551
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Tc)
2.5V, 4.5V
56mOhm @ 1.7A, 4.5V
900mV @ 250µA
12 nC @ 2.5 V
±10V
405 pF @ 10 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
G6N02L
06N06L
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Goford Semiconductor
9,443
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.83050
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
5.5A
-
42mOhm @ 3A, 10V
2.5V @ 250µA
2.4 nC @ 10 V
±20V
765 pF @ 30 V
-
960mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
G6N02L
G1003B
N100V,RD(MAX)<170M@10V,RD(MAX)<1
Goford Semiconductor
2,461
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.81753
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3A (Tc)
4.5V, 10V
130mOhm @ 1A, 10V
2.5V @ 250µA
30 nC @ 10 V
±20V
760 pF @ 50 V
-
3.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
2302
3415A
P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Goford Semiconductor
6,276
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68275
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Tc)
2.5V, 4.5V
45mOhm @ 4A, 4.5V
1.1V @ 250µA
12 nC @ 4.5 V
±10V
950 pF @ 10 V
-
1.4W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G500P03IE
G3416
MOSFET N-CH ESD 20V 6A SOT-23
Goford Semiconductor
3,000
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.56158
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
MOSFET (Metal Oxide)
-
6A (Tc)
2.5V, 4.5V
20mOhm @ 3A, 4.5V
1.3V @ 250µA
15 nC @ 10 V
±12V
748 pF @ 10 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
-
G1002
G1002
MOSFET N-CH 100V 2A 1.3W SOT-23
Goford Semiconductor
2,980
In Stock
1 : ¥3.23000
Cut Tape (CT)
3,000 : ¥0.58151
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2A (Tc)
4.5V, 10V
250mOhm @ 2A, 10V
3V @ 250µA
10 nC @ 10 V
±20V
535 pF @ 50 V
-
1.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G2012
G20N03D2
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Goford Semiconductor
4,550
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86945
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
15mOhm @ 5A, 10V
2V @ 250µA
20 nC @ 10 V
±20V
873 pF @ 30 V
-
1.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-DFN (2x2)
6-WDFN Exposed Pad
G6N02L
G05P06L
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
Goford Semiconductor
3,774
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86945
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
5A (Tc)
4.5V, 10V
80mOhm @ 4A, 10V
2.5V @ 250µA
37 nC @ 10 V
±20V
1366 pF @ 50 V
-
2.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G08N02L
G5N02L
N20V, 5A, RD<18M@10V,VTH0.4V~1.0
Goford Semiconductor
3,000
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57761
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
5A (Tc)
2.5V, 10V
18mOhm @ 4.2A, 10V
1V @ 250µA
11 nC @ 4.5 V
±12V
780 pF @ 10 V
-
1.25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G6N02L
G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9
Goford Semiconductor
2,899
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.85713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
1.7A (Tc)
4.5V, 10V
700mOhm @ 1A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
580 pF @ 25 V
-
1.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G6N02L
G1003A
N100V,RD(MAX)<210M@10V,RD(MAX)<2
Goford Semiconductor
2,736
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86945
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3A (Tc)
4.5V, 10V
210mOhm @ 3A, 10V
3V @ 250µA
18.2 nC @ 10 V
±20V
622 pF @ 25 V
-
5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
G3404LL
G1K1P06LL
P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Goford Semiconductor
1,856
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71245
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3A (Tc)
4.5V, 10V
110mOhm @ 2A, 10V
2.5V @ 250µA
25 nC @ 10 V
±20V
1035 pF @ 30 V
-
1.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6L
SOT-23-6
G30N04D3
GT100N04D3
N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Goford Semiconductor
4,559
In Stock
1 : ¥3.28000
Cut Tape (CT)
5,000 : ¥1.04478
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13A (Tc)
4.5V, 10V
10mOhm @ 5A, 10V
2.5V @ 250µA
32 nC @ 10 V
±20V
642 pF @ 20 V
-
23W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (3.15x3.05)
8-PowerVDFN
GT095N04D3
GT095N04D3
MOSFET N-CH 40V 47A DFN3*3-8L
Goford Semiconductor
4,119
In Stock
1 : ¥3.28000
Cut Tape (CT)
5,000 : ¥1.04478
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
47A (Tc)
4.5V, 10V
6mOhm @ 3A, 10V
2.5V @ 250µA
23 nC @ 10 V
±20V
947 pF @ 20 V
-
22.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN (3.15x3.05)
8-PowerVDFN
G06N06S
G33N03S
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Goford Semiconductor
3,830
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥1.10075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
13A (Tc)
4.5V, 10V
12mOhm @ 8A, 10V
1.1V @ 250µA
13 nC @ 5 V
±20V
1550 pF @ 15 V
-
2.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
G06N06S
G7P03S
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
Goford Semiconductor
3,613
In Stock
1 : ¥3.28000
Cut Tape (CT)
4,000 : ¥1.10075
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
22mOhm @ 3A, 10V
2V @ 250µA
24.5 nC @ 10 V
±20V
1253 pF @ 15 V
-
2.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
Showing
of 338

Goford Semiconductor Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.