DirectFET™ Isometric ME Single FETs, MOSFETs

Results: 11
Manufacturer
Infineon TechnologiesInternational Rectifier
Series
DirectFET®HEXFET®, StrongIRFET™OptiMOS™5StrongIRFET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New DesignsObsolete
Drain to Source Voltage (Vdss)
40 V60 V75 V
Current - Continuous Drain (Id) @ 25°C
44A (Ta), 211A (Tc)89A (Tc)114A (Tc)130A (Tc)209A (Tc)217A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
0.82mOhm @ 50A, 10V1.2mOhm @ 132A, 10V1.25mOhm @ 123A, 10V2.9mOhm @ 80A, 10V3.6mOhm @ 70A, 10V5.7mOhm @ 53A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 150µA3.7V @ 150µA3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 4.5 V165 nC @ 10 V180 nC @ 10 V185 nC @ 10 V186 nC @ 10 V200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6504 pF @ 25 V6510 pF @ 25 V6530 pF @ 25 V6680 pF @ 25 V6904 pF @ 25 V8400 pF @ 20 V
Power Dissipation (Max)
2.8W (Ta), 63W (Tc)96W (Tc)104W (Tc)115W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DirectFET™ Isometric MEMG-WDSON-8-904
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
DirectFET Isometric ME
IRF7480MTRPBF
MOSFET N-CH 40V 217A DIRECTFET
Infineon Technologies
17,204
In Stock
1 : ¥20.44000
Cut Tape (CT)
4,800 : ¥8.86132
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
217A (Tc)
6V, 10V
1.2mOhm @ 132A, 10V
3.9V @ 150µA
185 nC @ 10 V
±20V
6680 pF @ 25 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
6,643
In Stock
1 : ¥23.64000
Cut Tape (CT)
4,800 : ¥10.24852
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
44A (Ta), 211A (Tc)
4.5V, 10V
0.82mOhm @ 50A, 10V
2V @ 250µA
165 nC @ 10 V
±20V
8400 pF @ 20 V
-
2.8W (Ta), 63W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
MG-WDSON-8-904
DirectFET™ Isometric ME
DirectFET Isometric ME
IRL7486MTRPBF
MOSFET N-CH 40V 209A DIRECTFET
Infineon Technologies
4,375
In Stock
1 : ¥19.05000
Cut Tape (CT)
4,800 : ¥8.00456
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
209A (Tc)
4.5V, 10V
1.25mOhm @ 123A, 10V
2.5V @ 150µA
111 nC @ 4.5 V
±20V
6904 pF @ 25 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
INFIRFAUIRF7647S2TR
IRF60DM206
IRF60 - 12V-300V N-CHANNEL POWER
International Rectifier
51,208
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
130A (Tc)
6V, 10V
2.9mOhm @ 80A, 10V
3.7V @ 150µA
200 nC @ 10 V
±20V
6530 pF @ 25 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
INFIRFIRF6621TRPBF
IRL7486MTRPBF
IRL7486M - 12V-300V N-CHANNEL PO
International Rectifier
4,920
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
209A (Tc)
4.5V, 10V
1.25mOhm @ 123A, 10V
2.5V @ 150µA
111 nC @ 4.5 V
±20V
6904 pF @ 25 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
INFIRFIRF6621TRPBF
IRF7580MTRPBF
IRF7580 - 12V-300V N-CHANNEL POW
International Rectifier
7,423
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
114A (Tc)
6V, 10V
3.6mOhm @ 70A, 10V
3.7V @ 150µA
180 nC @ 10 V
±20V
6510 pF @ 25 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
INFIRFIRF6621TRPBF
IRF7580MTRPBF
IRF7580 - 12V-300V N-CHANNEL POW
Infineon Technologies
1,536
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
114A (Tc)
6V, 10V
3.6mOhm @ 70A, 10V
3.7V @ 150µA
180 nC @ 10 V
±20V
6510 pF @ 25 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
DirectFET Isometric ME
IRF60DM206
MOSFET N-CH 60V 130A DIRECTFET
Infineon Technologies
0
In Stock
1 : ¥22.00000
Cut Tape (CT)
4,800 : ¥10.26431
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
130A (Tc)
6V, 10V
2.9mOhm @ 80A, 10V
3.7V @ 150µA
200 nC @ 10 V
±20V
6530 pF @ 25 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
0
In Stock
Check Lead Time
1 : ¥22.00000
Cut Tape (CT)
4,800 : ¥10.26431
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
130A (Tc)
6V, 10V
2.9mOhm @ 80A, 10V
3.7V @ 150µA
200 nC @ 10 V
±20V
6530 pF @ 25 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
DirectFET Isometric ME
IRF7580MTRPBF
MOSFET N-CH 60V 114A DIRECTFET
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
114A (Tc)
6V, 10V
3.6mOhm @ 70A, 10V
3.7V @ 150µA
180 nC @ 10 V
±20V
6510 pF @ 25 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
DirectFET Isometric ME
IRF7780MTRPBF
MOSFET N-CH 75V 89A DIRECTFET
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
89A (Tc)
6V, 10V
5.7mOhm @ 53A, 10V
3.7V @ 150µA
186 nC @ 10 V
±20V
6504 pF @ 25 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
Showing
of 11

DirectFET™ Isometric ME Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.