91A (Tc) Single FETs, MOSFETs

Results: 16
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.STMicroelectronicsTaiwan Semiconductor Corporation
Series
-CoolSiC™ Gen 2HEXFET®TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V80 V100 V650 V1200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V15V, 20V18V
Rds On (Max) @ Id, Vgs
5mOhm @ 15A, 10V7mOhm @ 14A, 10V7.8mOhm @ 14A, 10V9mOhm @ 15A, 10V9.1mOhm @ 20A, 10V24mOhm @ 46.9A, 18V30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
2.15V @ 1mA2.5V @ 250µA2.8V @ 1mA3V @ 250µA4V @ 250µA4.9V @ 1mA5.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V27 nC @ 5 V29 nC @ 10 V34 nC @ 10 V41.2 nC @ 10 V57 nC @ 18 V150 nC @ 18 V
Vgs (Max)
±20V+22V, -10V+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1469 pF @ 20 V1760 pF @ 12 V2028 pF @ 50 V2038 pF @ 400 V2345 pF @ 40 V2672 pF @ 16 V3540 pF @ 800 V
Power Dissipation (Max)
1.5W (Ta), 100W (Tc)1.6W (Ta), 100W (Tc)1.7W (Ta)61W (Tc)113W (Tc)115W (Tc)326W (Tc)547W547W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
8-PDFN (5.2x5.75)HiP247™LFPAK56, Power-SO8PG-TO263-7-12PowerDI5060-8PowerDI5060-8 (Type UX)TO-247-4TO-252 (DPAK)TO-252AA (DPAK)
Package / Case
8-PowerLDFN8-PowerTDFNSC-100, SOT-669TO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFPAK56/POWER-SO8/SOT669
PSMN5R0-30YL,115
MOSFET N-CH 30V 91A LFPAK56
Nexperia USA Inc.
2,960
In Stock
1 : ¥6.81000
Cut Tape (CT)
1,500 : ¥2.89374
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
5mOhm @ 15A, 10V
2.15V @ 1mA
29 nC @ 10 V
±20V
1760 pF @ 12 V
-
61W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO-247-3 HiP
SCTW70N120G2V
TRANS SJT N-CH 1200V 91A HIP247
STMicroelectronics
575
In Stock
1 : ¥297.69000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
91A (Tc)
18V
30mOhm @ 50A, 18V
4.9V @ 1mA
150 nC @ 18 V
+22V, -10V
3540 pF @ 800 V
-
547W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
HiP247™
TO-247-3
DMTH8008LPSQ-13
DMTH8008LPSQ-13
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
2,470
In Stock
940,000
Factory
1 : ¥9.52000
Cut Tape (CT)
2,500 : ¥3.94044
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
91A (Tc)
4.5V, 10V
7.8mOhm @ 14A, 10V
2.8V @ 1mA
41.2 nC @ 10 V
±20V
2345 pF @ 40 V
-
1.6W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerDI5060-8
8-PowerTDFN
157
In Stock
1 : ¥132.92000
Cut Tape (CT)
1,000 : ¥84.19836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
91A (Tc)
15V, 20V
24mOhm @ 46.9A, 18V
5.6V @ 9.5mA
57 nC @ 18 V
+23V, -7V
2038 pF @ 400 V
-
326W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DMPH4015SPSQ-13
DMTH8008LPS-13
MOSFET N-CH 80V 91A PWRDI5060-8
Diodes Incorporated
0
In Stock
2,500
Factory
Check Lead Time
2,500 : ¥3.01901
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
80 V
91A (Tc)
4.5V, 10V
7.8mOhm @ 14A, 10V
2.8V @ 1mA
41.2 nC @ 10 V
±20V
2345 pF @ 40 V
-
1.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
TO-252 D-Pak Top
DMT10H009SK3-13
MOSFET BVDSS: 61V~100V TO252 T&R
Diodes Incorporated
0
In Stock
7,500
Factory
Check Lead Time
2,500 : ¥3.83500
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
91A (Tc)
10V
9.1mOhm @ 20A, 10V
4V @ 250µA
34 nC @ 10 V
±20V
2028 pF @ 50 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerDI5060 UX
DMTH8008LPSWQ-13
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
0
In Stock
Check Lead Time
2,500 : ¥4.06303
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
80 V
91A (Tc)
4.5V, 10V
7.8mOhm @ 14A, 10V
2.8V @ 1mA
41.2 nC @ 10 V
±20V
2345 pF @ 40 V
-
1.6W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
TO252-3
IRLR8103VTRRPBF
MOSFET N-CH 30V 91A DPAK
Infineon Technologies
0
In Stock
3,000 : ¥4.45946
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2672 pF @ 16 V
-
115W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
1 : ¥7.47000
Cut Tape (CT)
5,000 : ¥2.94496
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
91A (Tc)
4.5V, 10V
7mOhm @ 14A, 10V
2.5V @ 250µA
23.5 nC @ 10 V
±20V
1469 pF @ 20 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (5.2x5.75)
8-PowerLDFN
TO252-3
IRLR8103VTRPBF
MOSFET N-CH 30V 91A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2672 pF @ 16 V
-
115W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
600 : ¥198.47503
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
91A (Tc)
18V
30mOhm @ 50A, 18V
4.9V @ 1mA
150 nC @ 18 V
+22V, -10V
3540 pF @ 800 V
-
547W
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO252-3
IRLR8103VTRL
MOSFET N-CH 30V 91A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2672 pF @ 16 V
-
115W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRLR8103VTRR
MOSFET N-CH 30V 91A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2672 pF @ 16 V
-
115W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRLR8103VPBF
MOSFET N-CH 30V 91A DPAK
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2672 pF @ 16 V
-
115W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRLR8103VTRLPBF
MOSFET N-CH 30V 91A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
4.5V, 10V
9mOhm @ 15A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2672 pF @ 16 V
-
115W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
LFPAK56/POWER-SO8/SOT669
PH5030AL,115
MOSFET N-CH 30V 91A LFPAK56
Nexperia USA Inc.
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
91A (Tc)
-
5mOhm @ 15A, 10V
2.15V @ 1mA
29 nC @ 10 V
-
1760 pF @ 12 V
-
-
-
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
Showing
of 16

91A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.