9-WFBGA Single FETs, MOSFETs

Results: 8
Manufacturer
Fairchild Semiconductoronsemi
Packaging
BulkTape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)4.6A (Ta)6A (Ta)7.5A (Ta)
Rds On (Max) @ Id, Vgs
18mOhm @ 7.5A, 4.5V27mOhm @ 6A, 4.5V45mOhm @ 4.5A, 4.5V46mOhm @ 4.6A, 4.5V55mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V10 nC @ 4.5 V11 nC @ 4.5 V13 nC @ 4.5 V15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 10 V742 pF @ 10 V754 pF @ 10 V884 pF @ 10 V1127 pF @ 10 V
Power Dissipation (Max)
1.6W (Ta)1.7W (Ta)1.8W (Ta)
Supplier Device Package
9-BGA (1.55x1.55)9-BGA (1.5x1.6)9-BGA (2x2.1)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TEXTISLM3671TLX-1.2/NOPB
FDZ493P
MOSFET P-CH 20V 4.6A 9BGA
Fairchild Semiconductor
47,700
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.6A (Ta)
2.5V, 4.5V
46mOhm @ 4.6A, 4.5V
1.5V @ 250µA
11 nC @ 4.5 V
±12V
754 pF @ 10 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (1.55x1.55)
9-WFBGA
TEXTISLM3671TLX-1.2/NOPB
FDZ204P
MOSFET P-CH 20V 4.5A 9BGA
Fairchild Semiconductor
157,309
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
2.5V, 4.5V
45mOhm @ 4.5A, 4.5V
1.5V @ 250µA
13 nC @ 4.5 V
±12V
884 pF @ 10 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (2x2.1)
9-WFBGA
TEXTISLM3671TLX-1.2/NOPB
FDZ299P
MOSFET P-CH 20V 4.6A 9BGA
Fairchild Semiconductor
14,445
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.6A (Ta)
2.5V, 4.5V
55mOhm @ 4.6A, 4.5V
1.5V @ 250µA
9 nC @ 4.5 V
±12V
742 pF @ 10 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (2x2.1)
9-WFBGA
FDZ493P
FDZ493P
MOSFET P-CH 20V 4.6A 9BGA
onsemi
0
In Stock
3,000 : ¥2.35137
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.6A (Ta)
2.5V, 4.5V
46mOhm @ 4.6A, 4.5V
1.5V @ 250µA
11 nC @ 4.5 V
±12V
754 pF @ 10 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (1.55x1.55)
9-WFBGA
MOSFET P-CH 20V 4.5A 9BGA
FDZ204P
MOSFET P-CH 20V 4.5A 9BGA
onsemi
0
In Stock
3,000 : ¥2.59950
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
2.5V, 4.5V
45mOhm @ 4.5A, 4.5V
1.5V @ 250µA
13 nC @ 4.5 V
±12V
884 pF @ 10 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (2x2.1)
9-WFBGA
MOSFET P-CH 20V 4.6A 9BGA
FDZ299P
MOSFET P-CH 20V 4.6A 9BGA
onsemi
0
In Stock
3,000 : ¥2.59950
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
4.6A (Ta)
2.5V, 4.5V
55mOhm @ 4.6A, 4.5V
1.5V @ 250µA
9 nC @ 4.5 V
±12V
742 pF @ 10 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (2x2.1)
9-WFBGA
MOSFET N-CH 20V 6A 9BGA
FDZ298N
MOSFET N-CH 20V 6A 9BGA
onsemi
0
In Stock
3,000 : ¥4.07464
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
6A (Ta)
2.5V, 4.5V
27mOhm @ 6A, 4.5V
1.5V @ 250µA
10 nC @ 4.5 V
±12V
680 pF @ 10 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (1.5x1.6)
9-WFBGA
MOSFET N-CH 20V 7.5A 9BGA
FDZ203N
MOSFET N-CH 20V 7.5A 9BGA
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
7.5A (Ta)
2.5V, 4.5V
18mOhm @ 7.5A, 4.5V
1.5V @ 250µA
15 nC @ 4.5 V
±12V
1127 pF @ 10 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-BGA (2x2.1)
9-WFBGA
Showing
of 8

9-WFBGA Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.