9.2A (Ta), 53A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SUP53P06-20-E3 MOSFET P-CH 60V 9.2A/53A TO220AB Vishay Siliconix	3,292 In Stock	1 : ¥22.99000 Tube	TrenchFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	9.2A (Ta), 53A (Tc)	4.5V, 10V	19.5mOhm @ 30A, 10V	3V @ 250µA	115 nC @ 10 V	±20V	3500 pF @ 25 V	-	3.1W (Ta), 104.2W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SUP53P06-20-GE3 MOSFET P-CH 60V 9.2A/53A TO220AB Vishay Siliconix	0 In Stock	Obsolete	TrenchFET®	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	9.2A (Ta), 53A (Tc)	4.5V, 10V	19.5mOhm @ 30A, 10V	3V @ 250µA	115 nC @ 10 V	±20V	3500 pF @ 25 V	-	3.1W (Ta), 104.2W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3

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9.2A (Ta), 53A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.