8A (Ta), 30A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTTFS6H860NTAG TRENCH 8 80V NFET onsemi	2,498 In Stock 4,500 Factory	1 : ¥5.34000 Cut Tape (CT) 1,500 : ¥2.26601 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	8A (Ta), 30A (Tc)	6V, 10V	21.1mOhm @ 5A, 10V	4V @ 30µA	8.7 nC @ 10 V	±20V	510 pF @ 40 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVTFS6H860NWFTAG MOSFET N-CH 80V 8A/30A 8WDFN onsemi	4,520 In Stock	1 : ¥6.98000 Cut Tape (CT) 1,500 : ¥2.97184 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	80 V	8A (Ta), 30A (Tc)	10V	21.1mOhm @ 5A, 10V	4V @ 30µA	8.7 nC @ 10 V	±20V	510 pF @ 40 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVTFS6H860NTAG MOSFET N-CH 80V 8A/30A 8WDFN onsemi	0 In Stock Check Lead Time	1 : ¥4.93000 Cut Tape (CT) 1,500 : ¥2.11742 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	8A (Ta), 30A (Tc)	10V	21.1mOhm @ 5A, 10V	4V @ 30µA	8.7 nC @ 10 V	±20V	510 pF @ 40 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN

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8A (Ta), 30A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.