8.2A (Tc) Single FETs, MOSFETs

Results: 18
Manufacturer
Fairchild SemiconductorGoford SemiconductorInfineon TechnologiesNXP USA Inc.onsemiVishay Siliconix
Series
-CoolGaN™QFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V50 V60 V100 V200 V600 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V-
Rds On (Max) @ Id, Vgs
8.5mOhm @ 4.2A, 4.5V155mOhm @ 5A, 10V180mOhm @ 8A, 10V200mOhm @ 4.2A, 10V200mOhm @ 4.6A, 10V290mOhm @ 4.1A, 10V550mOhm @ 4A, 10V-
Vgs(th) (Max) @ Id
900mV @ 250µA1.6V @ 530µA2V @ 250µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V18 nC @ 10 V19 nC @ 10 V27 nC @ 10 V29 nC @ 10 V40 nC @ 10 V
Vgs (Max)
-10V±8V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
87.7 pF @ 400 V250 pF @ 25 V450 pF @ 25 V540 pF @ 50 V800 pF @ 25 V1255 pF @ 10 V1850 pF @ 25 V
Power Dissipation (Max)
1.05W (Tc)1.7W (Ta), 20.8W (Tc)25W (Tc)30W (Tc)38W (Tc)41.6W (Tc)94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-TSSOPDPAKIPAKPG-TSON-8-7TO-220FTO-220F-3TO-251AATO-252AA
Package / Case
8-PowerTDFN8-TSSOP (0.173", 4.40mm Width)TO-220-3 Full PackTO-220-3 Full Pack, Isolated TabTO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252
SUD08P06-155L-BE3
MOSFET P-CH 60V 8.2A DPAK
Vishay Siliconix
2,615
In Stock
1 : ¥7.96000
Cut Tape (CT)
2,000 : ¥3.28236
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
8.2A (Tc)
4.5V, 10V
155mOhm @ 5A, 10V
2V @ 250µA
19 nC @ 10 V
±20V
450 pF @ 25 V
-
1.7W (Ta), 20.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR010PBF
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
2,882
In Stock
1 : ¥8.13000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
IRFR010PBF-BE3
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
2,790
In Stock
1 : ¥8.13000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
-
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
4,892
In Stock
1 : ¥35.63000
Cut Tape (CT)
5,000 : ¥16.62485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
8.2A (Tc)
-
-
1.6V @ 530µA
-
-10V
87.7 pF @ 400 V
-
41.6W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TSON-8-7
8-PowerTDFN
INFINFIPAN60R360PFD7SXKSA1
FQPF12P10
MOSFET P-CH 100V 8.2A TO220F
Fairchild Semiconductor
114,717
Marketplace
Unavailable
Unavailable in your selected currency
Tube
Obsolete
P-Channel
MOSFET (Metal Oxide)
100 V
8.2A (Tc)
10V
290mOhm @ 4.1A, 10V
4V @ 250µA
27 nC @ 10 V
±30V
800 pF @ 25 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
G085P02TS
G085P02TS
P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Goford Semiconductor
4,480
In Stock
1 : ¥4.68000
Cut Tape (CT)
5,000 : ¥1.67910
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
8.2A (Tc)
1.8V, 4.5V
8.5mOhm @ 4.2A, 4.5V
900mV @ 250µA
29 nC @ 10 V
±8V
1255 pF @ 10 V
-
1.05W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
IPAK/TP
NDD60N550U1-35G
MOSFET N-CH 600V 8.2A IPAK
onsemi
0
In Stock
20,625
Marketplace
Obsolete
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.2A (Tc)
10V
550mOhm @ 4A, 10V
4V @ 250µA
18 nC @ 10 V
±25V
540 pF @ 50 V
-
94W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK/TP
NDD60N550U1-1G
MOSFET N-CH 600V 8.2A IPAK
onsemi
0
In Stock
20,475
Marketplace
Obsolete
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.2A (Tc)
10V
550mOhm @ 4A, 10V
4V @ 250µA
18 nC @ 10 V
±25V
540 pF @ 50 V
-
94W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
D-PAK (TO-252AA)
IRFR010TRLPBF
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
0
In Stock
Check Lead Time
3,000 : ¥4.78771
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR010TRPBF
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
0
In Stock
Check Lead Time
2,000 : ¥4.78771
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR010TR
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
0
In Stock
2,000 : ¥5.83393
Tape & Reel (TR)
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR010TRL
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
0
In Stock
3,000 : ¥10.80353
Tape & Reel (TR)
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR010
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR010TRR
MOSFET N-CH 50V 8.2A DPAK
Vishay Siliconix
0
In Stock
Active
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.6A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-251AA
IRFU010
MOSFET N-CH 50V 8.2A TO251AA
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
50 V
8.2A (Tc)
10V
200mOhm @ 4.2A, 10V
4V @ 250µA
10 nC @ 10 V
±20V
250 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220F
FQPF12P10
MOSFET P-CH 100V 8.2A TO220F
onsemi
0
In Stock
Obsolete
Tube
Obsolete
P-Channel
MOSFET (Metal Oxide)
100 V
8.2A (Tc)
10V
290mOhm @ 4.1A, 10V
4V @ 250µA
27 nC @ 10 V
±30V
800 pF @ 25 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
TO-220-3FullPack_SOT186A
PHX18NQ20T,127
MOSFET N-CH 200V 8.2A TO220F
NXP USA Inc.
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
200 V
8.2A (Tc)
10V
180mOhm @ 8A, 10V
4V @ 1mA
40 nC @ 10 V
±20V
1850 pF @ 25 V
-
30W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack, Isolated Tab
DPAK_369C
NDD60N550U1T4G
MOSFET N-CH 600V 8.2A DPAK
onsemi
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.2A (Tc)
10V
550mOhm @ 4A, 10V
4V @ 250µA
18 nC @ 10 V
±25V
540 pF @ 50 V
-
94W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 18

8.2A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.