760mA (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTE4151PT1G MOSFET P-CH 20V 760MA SC89-3 onsemi	82,738 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.80196 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	760mA (Tj)	1.8V, 4.5V	360mOhm @ 350mA, 4.5V	1.2V @ 250µA	2.1 nC @ 4.5 V	±6V	156 pF @ 5 V	-	313mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
NTA4151PT1G MOSFET P-CH 20V 760MA SC75 onsemi	149,789 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.61450 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	760mA (Tj)	1.8V, 4.5V	360mOhm @ 350mA, 4.5V	1.2V @ 250µA	2.1 nC @ 4.5 V	±6V	156 pF @ 5 V	-	301mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
NTA4151PT1H MOSFET P-CH 20V 760MA SC75 onsemi	53,885 In Stock 90,000 Factory	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.52171 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	760mA (Tj)	1.8V, 4.5V	360mOhm @ 350mA, 4.5V	1.2V @ 250µA	2.1 nC @ 4.5 V	±6V	156 pF @ 5 V	-	301mW (Tj)	-	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
NTA4151PT1 MOSFET P-CH 20V 760MA SC75 onsemi	0 In Stock	6,000 : ¥0.99503 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	760mA (Tj)	1.8V, 4.5V	360mOhm @ 350mA, 4.5V	1.2V @ 250µA	2.1 nC @ 4.5 V	±6V	156 pF @ 5 V	-	301mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.