75mA (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

ZVP3310FTA MOSFET P-CH 100V 75MA SOT23-3 Diodes Incorporated	14,762 In Stock	1 : ¥6.16000 Cut Tape (CT) 3,000 : ¥1.30897 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	75mA (Ta)	10V	20Ohm @ 150mA, 10V	3.5V @ 1mA	±20V	50 pF @ 25 V	-	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVP0545GTA MOSFET P-CH 450V 75MA SOT223 Diodes Incorporated	3,509 In Stock	1 : ¥11.82000 Cut Tape (CT) 1,000 : ¥3.42595 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	450 V	75mA (Ta)	10V	150Ohm @ 50mA, 10V	4.5V @ 1mA	±20V	120 pF @ 25 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
ZVP3310FTC MOSFET P-CH 100V 75MA SOT23-3 Diodes Incorporated	0 In Stock	10,000 : ¥1.91750 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	75mA (Ta)	10V	20Ohm @ 150mA, 10V	3.5V @ 1mA	±20V	50 pF @ 25 V	-	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVP0545GTC MOSFET P-CH 450V 75MA SOT223 Diodes Incorporated	0 In Stock	4,000 : ¥3.40684 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	450 V	75mA (Ta)	10V	150Ohm @ 50mA, 10V	4.5V @ 1mA	±20V	120 pF @ 25 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA

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75mA (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.