68.5A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPW65R041CFDFKSA2 MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies	615 In Stock	1 : ¥110.67000 Tube	CoolMOS™ CFD2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	41mOhm @ 33.1A, 10V	4.5V @ 3.3mA	300 nC @ 10 V	±20V	8400 pF @ 100 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPW65R041CFDFKSA1 MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies	0 In Stock	240 : ¥90.51479 Tube	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	41mOhm @ 33.1A, 10V	4.5V @ 3.3mA	300 nC @ 10 V	±20V	8400 pF @ 100 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3

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68.5A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.