600A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IXTN600N04T2 MOSFET N-CH 40V 600A SOT227B Littelfuse Inc.	63 In Stock	1 : ¥298.59000 Tube	TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	600A (Tc)	10V	1.05mOhm @ 100A, 10V	3.5V @ 250µA	590 nC @ 10 V	±20V	40000 pF @ 25 V	-	940W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
MMIX1T600N04T2 MOSFET N-CH 40V 600A 24SMPD IXYS	0 In Stock Check Lead Time	1 : ¥311.40000 Tube	FRFET®, SupreMOS®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	600A (Tc)	10V	1.3mOhm @ 100A, 10V	3.5V @ 250µA	590 nC @ 10 V	±20V	40000 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
IXTX600N04T2 MOSFET N-CH 40V 600A PLUS247-3 Littelfuse Inc.	0 In Stock Check Lead Time	300 : ¥136.54573 Tube	TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	600A (Tc)	10V	1.5mOhm @ 100A, 10V	3.5V @ 250µA	590 nC @ 10 V	±20V	40000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTK600N04T2 MOSFET N-CH 40V 600A TO264 Littelfuse Inc.	0 In Stock Check Lead Time	300 : ¥138.27310 Tube	TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	600A (Tc)	10V	1.5mOhm @ 100A, 10V	3.5V @ 250µA	590 nC @ 10 V	±20V	40000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
BSM600C12P3G201 SICFET N-CH 1200V 600A MODULE Rohm Semiconductor	0 In Stock Check Lead Time	4 : ¥10,268.70000 Tray	-	Tray	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	600A (Tc)	-	-	5.6V @ 182mA	-	+22V, -4V	28000 pF @ 10 V	-	2460W (Tc)	175°C (TJ)	Chassis Mount	Module	Module

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600A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.