6-XFDFN Exposed Pad Single FETs, MOSFETs

Results: 6
Manufacturer
Central Semiconductor CorpNXP USA Inc.
Packaging
BulkTape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V
Current - Continuous Drain (Id) @ 25°C
280mA (Ta)1A (Ta)4.3A (Ta)5A (Ta)5.5A (Ta)8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V2.5V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 8A, 4.5V33mOhm @ 5A, 4.5V37mOhm @ 5.5A, 4.5V47mOhm @ 4.3A, 4.5V100mOhm @ 500mA, 4.5V2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA1.2V @ 1mA1.2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V2.4 nC @ 4.5 V7.6 nC @ 4.5 V18.6 nC @ 4.5 V23 nC @ 4.5 V36 nC @ 4.5 V
Vgs (Max)
8V±12V20V
Input Capacitance (Ciss) (Max) @ Vds
70 pF @ 25 V220 pF @ 10 V505 pF @ 15 V1150 pF @ 15 V1575 pF @ 10 V2195 pF @ 15 V
Power Dissipation (Max)
1.5W (Ta), 8.3W (Tc)1.6W (Ta)1.7W (Ta), 12.5W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
DFN1010B-6TLM621H
Stocking Options
Environmental Options
Media
Marketplace Product
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TEXTISLM3671TLX-1.2/NOPB
PMPB33XN,115
MOSFET N-CH 30V 4.3A DFN2020MD-6
NXP USA Inc.
81,074
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
2.5V, 4.5V
47mOhm @ 4.3A, 4.5V
1.2V @ 250µA
7.6 nC @ 4.5 V
±12V
505 pF @ 15 V
-
1.5W (Ta), 8.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010B-6
6-XFDFN Exposed Pad
TEXTISLM3671TLX-1.2/NOPB
PMPB33XP,115
NOW NEXPERIA PMPB33XP - 5.5A, 20
NXP USA Inc.
31,498
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5.5A (Ta)
1.8V, 4.5V
37mOhm @ 5.5A, 4.5V
900mV @ 250µA
23 nC @ 4.5 V
±12V
1575 pF @ 10 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010B-6
6-XFDFN Exposed Pad
TEXTISLM3671TLX-1.2/NOPB
PMPB29XNE,115
MOSFET N-CH 30V 5A DFN2020MD-6
NXP USA Inc.
7,000
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5A (Ta)
1.8V, 4.5V
33mOhm @ 5A, 4.5V
900mV @ 250µA
18.6 nC @ 4.5 V
±12V
1150 pF @ 15 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010B-6
6-XFDFN Exposed Pad
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
1.5V, 4.5V
100mOhm @ 500mA, 4.5V
1.2V @ 1mA
2.4 nC @ 4.5 V
8V
220 pF @ 10 V
-
1.6W (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
TLM621H
6-XFDFN Exposed Pad
0
In Stock
Obsolete
-
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
50 V
280mA (Ta)
5V, 10V
2.5Ohm @ 500mA, 10V
2.5V @ 250µA
0.72 nC @ 4.5 V
20V
70 pF @ 25 V
-
1.6W (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
TLM621H
6-XFDFN Exposed Pad
TEXTISLM3671TLX-1.2/NOPB
PMPB13XNE,115
MOSFET N-CH 30V 8A DFN2020MD-6
NXP USA Inc.
0
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
8A (Ta)
1.8V, 4.5V
16mOhm @ 8A, 4.5V
900mV @ 250µA
36 nC @ 4.5 V
±12V
2195 pF @ 15 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010B-6
6-XFDFN Exposed Pad
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6-XFDFN Exposed Pad Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.