56A (Ta) Single FETs, MOSFETs

Results: 7
Manufacturer
Infineon TechnologiesRenesas Electronics CorporationToshiba Semiconductor and Storage
Series
-HEXFET®OptiMOS™U-MOSVII-HU-MOSVIII-H
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V120 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 28A, 10V4.7mOhm @ 28A, 10V7mOhm @ 28A, 10V14.4mOhm @ 56A, 10V14.7mOhm @ 56A, 10V16mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA3V @ 100µA4V @ 1mA4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V62 nC @ 10 V69 nC @ 10 V91 nC @ 10 V224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 25 V3220 pF @ 60 V4200 pF @ 60 V7676 pF @ 25 V7700 pF @ 10 V
Power Dissipation (Max)
1W (Ta), 87.4W (Tc)1.6W (Ta), 70W (Tc)107W (Tc)143W (Tc)168W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOP Advance (5x5)PG-TO220-3PG-TO262-3PG-TO263-3TO-220TO-220ABTO-252
Package / Case
8-PowerVDFNTO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB144N12N3GATMA1
MOSFET N-CH 120V 56A D2PAK
Infineon Technologies
5,149
In Stock
1 : ¥18.64000
Cut Tape (CT)
1,000 : ¥8.84927
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
56A (Ta)
10V
14.4mOhm @ 56A, 10V
4V @ 61µA
49 nC @ 10 V
±20V
3220 pF @ 60 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IPP147N12N3GXKSA1
MOSFET N-CH 120V 56A TO220-3
Infineon Technologies
17,595
In Stock
1 : ¥14.20000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
120 V
56A (Ta)
10V
14.7mOhm @ 56A, 10V
4V @ 61µA
49 nC @ 10 V
±20V
3220 pF @ 60 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
5,857
In Stock
1 : ¥20.52000
Cut Tape (CT)
3,000 : ¥9.26372
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
56A (Ta)
10V
4.7mOhm @ 28A, 10V
4V @ 1mA
62 nC @ 10 V
±20V
3200 pF @ 25 V
-
1W (Ta), 87.4W (Tc)
150°C
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
62
In Stock
1 : ¥19.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
120 V
56A (Ta)
10V
7mOhm @ 28A, 10V
4V @ 1mA
69 nC @ 10 V
±20V
4200 pF @ 60 V
-
168W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
AUIRFSL6535 back
IPI147N12N3GAKSA1
MOSFET N-CH 120V 56A TO262-3
Infineon Technologies
0
In Stock
920
Marketplace
Discontinued at Digi-Key
Bulk
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
120 V
56A (Ta)
10V
14.7mOhm @ 56A, 10V
4V @ 61µA
49 nC @ 10 V
±20V
3220 pF @ 60 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-220AB PKG
IRF9204PBF
MOSFET P-CH 40V 56A TO220AB
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
P-Channel
MOSFET (Metal Oxide)
40 V
56A (Ta)
4.5V, 10V
16mOhm @ 37A, 10V
3V @ 100µA
224 nC @ 10 V
±20V
7676 pF @ 25 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
56A (Ta)
4.5V, 10V
1.9mOhm @ 28A, 10V
2.3V @ 1mA
91 nC @ 10 V
±20V
7700 pF @ 10 V
-
1.6W (Ta), 70W (Tc)
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
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56A (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.