47A (Ta), 310A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IQE006NE2LM5CGSCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	0 In Stock Check Lead Time	1 : ¥20.36000 Cut Tape (CT) 6,000 : ¥8.82312 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	47A (Ta), 310A (Tc)	4.5V, 10V	0.58mOhm @ 20A, 10V	2V @ 250µA	82 nC @ 10 V	±16V	5453 pF @ 12 V	-	2.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-1	9-PowerWDFN
IQE006NE2LM5SCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	0 In Stock Check Lead Time	1 : ¥20.36000 Cut Tape (CT) 6,000 : ¥8.82312 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	47A (Ta), 310A (Tc)	4.5V, 10V	0.58mOhm @ 20A, 10V	2V @ 250µA	82 nC @ 10 V	±16V	5453 pF @ 12 V	-	2.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-WHSON-8-1	8-PowerWDFN

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47A (Ta), 310A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.