46.5A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TP65H035G4WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	773 In Stock	1 : ¥147.28000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 0 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C	Through Hole	TO-247-3	TO-247-3
TP65H035WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	294 In Stock	1 : ¥115.34000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	12V	41mOhm @ 30A, 10V	4.8V @ 1mA	36 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TP65H035G4QS 650 V 46.5 A GAN FET HIGH VOLTAG Transphorm	1,855 In Stock	1 : ¥144.49000 Cut Tape (CT) 2,000 : ¥85.17367 Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	46.5A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TOLL	8-PowerSFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.