4.2A (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2305B-TP MOSFET P-CH 20V 4.2A SOT23 Micro Commercial Co	29,696 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.71245 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Tj)	1.8V, 4.5V	60mOhm @ 2.7A, 4.5V	900mV @ 250µA	15 nC @ 4.5 V	±8V	740 pF @ 4 V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SI3401A-TP MOSFET P-CH 30V 4.2A SOT23 Micro Commercial Co	21,715 In Stock	1 : ¥3.53000 Cut Tape (CT) 3,000 : ¥0.63215 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.2A (Tj)	2.5V, 10V	60mOhm @ 4.2A, 10V	1.3V @ 250µA	-	±12V	1050 pF @ 15 V	-	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MMFTN3422K MOSFET, SOT-23, 30V, 4.2A, 0, 1. Diotec Semiconductor	3,000 In Stock	3,000 : ¥0.68511 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	4.2A (Tj)	2.5V, 10V	42mOhm @ 4.2A, 10V	1.2V @ 250µA	14.5 nC @ 10 V	±12V	387 pF @ 25 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PMCM4402UPEZ MOSFET P-CH 20V 4WLCSP Nexperia USA Inc.	6,988 In Stock	1 : ¥3.20000 Cut Tape (CT) 9,000 : ¥0.72873 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Tj)	2.5V, 4.5V	-	-	6.2 nC @ 4.5 V	±8V	-	-	400mW	150°C (TJ)	Surface Mount	4-WLCSP (0.78x0.78)	4-XFBGA, WLCSP

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.