37.2A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMT6009LCT MOSFET N-CH 60V 37.2A TO220AB Diodes Incorporated	893 In Stock 7,200 Factory	1 : ¥6.98000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	37.2A (Tc)	4.5V, 10V	12mOhm @ 13.5A, 10V	2V @ 250µA	33.5 nC @ 10 V	±16V	1925 pF @ 30 V	-	2.2W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
DMWS120H100SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	27 In Stock 1,830 Factory	1 : ¥160.99000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37.2A (Tc)	15V	100mOhm @ 20A, 15V	3.5V @ 5mA	52 nC @ 15 V	+19V, -8V	1516 pF @ 1000 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4

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37.2A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.