35A Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

MCG35P04-TP P-CHANNEL MOSFET,DFN3333 Micro Commercial Co	10,495 In Stock	1 : ¥3.69000 Cut Tape (CT) 5,000 : ¥1.18990 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	35A	4.5V, 10V	25mOhm @ 15A, 10V	2.5V @ 250µA	26.6 nC @ 10 V	±20V	1257 pF @ 20 V	-	38W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN3333	8-VDFN Exposed Pad
G2R120MT33J SIC MOSFET N-CH TO263-7 GeneSiC Semiconductor	429 In Stock	1 : ¥886.91000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	35A	20V	156mOhm @ 20A, 20V	-	145 nC @ 20 V	+25V, -10V	3706 pF @ 1000 V	-	-	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MSC080SMA120S SICFET N-CH 1200V 35A D3PAK Microchip Technology	34 In Stock	1 : ¥112.72000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MCG35N04A-TP Interface Micro Commercial Co	0 In Stock Check Lead Time	5,000 : ¥2.01493 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	35A	4.5V, 10V	8mOhm @ 20A, 10V	2.5V @ 250µA	46.7 nC @ 10 V	±20V	1860 pF @ 20 V	-	40W	-55°C ~ 150°C	-	-	Surface Mount	DFN3333	8-VDFN Exposed Pad
MCG35P04A-TP MOSFET Micro Commercial Co	0 In Stock Check Lead Time	5,000 : ¥2.66418 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	35A	4.5V, 10V	20mOhm @ 15A, 10V	2.5V @ 250µA	57 nC @ 10 V	±20V	2511 pF @ 25 V	-	59W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN3333	8-VDFN Exposed Pad
APT35SM70S SICFET 700V 35A TO247-3 Microsemi Corporation	0 In Stock	Obsolete	-	Bulk	Obsolete	-	SiCFET (Silicon Carbide)	700 V	35A	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.