30.8A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TK31V60W5,LVQ MOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage	1,776 In Stock	1 : ¥41.71000 Cut Tape (CT) 2,500 : ¥15.86545 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	109mOhm @ 15.4A, 10V	4.5V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	240W (Tc)	150°C (TA)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK31V60X,LQ MOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage	23,727 In Stock	1 : ¥48.93000 Cut Tape (CT) 2,500 : ¥19.66248 Tape & Reel (TR)	DTMOSIV-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	98mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	240W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK31V60W,LVQ MOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage	2,455 In Stock	1 : ¥79.31000 Cut Tape (CT) 2,500 : ¥37.25199 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	98mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	240W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK31N60W5,S1VF MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	30 In Stock	1 : ¥65.76000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	99mOhm @ 15.4A, 10V	4.5V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	26 In Stock	1 : ¥100.90000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	Through Hole	TO-247-4L(T)	TO-247-4
TK31E60X,S1X MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	99 In Stock	1 : ¥51.31000 Tube	DTMOSIV-H	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK31A60W,S4VX MOSFET N-CH 600V 30.8A TO220SIS Toshiba Semiconductor and Storage	30 In Stock	1 : ¥68.47000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	45W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK31E60W,S1VX MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	44 In Stock	1 : ¥73.56000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK31J60W5,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	50 In Stock	1 : ¥83.17000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
TK31N60W,S1VF MOSFET N CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	30 : ¥47.82200 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK31N60X,S1F MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	20 In Stock	1 : ¥53.28000 Tube	DTMOSIV-H	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK31J60W,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : ¥80.78000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3

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30.8A (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.