30.4A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PHK31NQ03LT,518 NEXPERIA PHK31NQ03LT - 30.4A, 30 NXP Semiconductors	88,953 Marketplace	Unavailable Unavailable in your selected currency	TrenchMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	30.4A (Tc)	4.5V, 10V	4.4mOhm @ 25A, 10V	2.15V @ 1mA	33 nC @ 4.5 V	±20V	4235 pF @ 12 V	-	6.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PHX45NQ11T,127 MOSFET N-CH 110V 30.4A TO220F NXP USA Inc.	0 In Stock	Obsolete	TrenchMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	110 V	30.4A (Tc)	10V	25mOhm @ 25A, 10V	4V @ 1mA	61 nC @ 10 V	±20V	2600 pF @ 25 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack, Isolated Tab
PHK31NQ03LT,518 MOSFET N-CH 30V 30.4A 8SO Nexperia USA Inc.	0 In Stock	Obsolete	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	30.4A (Tc)	4.5V, 10V	4.4mOhm @ 25A, 10V	2.15V @ 1mA	33 nC @ 4.5 V	±20V	4235 pF @ 12 V	-	6.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.