28A Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

MCU28P10Y-TP P-CHANNEL MOSFET,DPAK Micro Commercial Co	4,463 In Stock	1 : ¥16.67000 Cut Tape (CT) 2,500 : ¥7.49920 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	28A	4.5V, 10V	52mOhm @ 15A, 10V	2.5V @ 250µA	40 nC @ 10 V	±20V	2100 pF @ 50 V	-	96W (Tj)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCAC28P06Y-TP P-CHANNEL MOSFET, DFN5060 Micro Commercial Co	5,455 In Stock	1 : ¥7.47000 Cut Tape (CT) 5,000 : ¥2.68658 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	28A	-	40mOhm @ 20A, 10V	2.7V @ 250µA	19.3 nC @ 10 V	±20V	1050 pF @ 30 V	-	60W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN5060	8-PowerTDFN
GAN7R0-150LBEZ 150 V, 7 MOHM GALLIUM NITRIDE (G Nexperia USA Inc.	3,568 In Stock	1 : ¥25.04000 Cut Tape (CT) 2,500 : ¥10.37884 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	150 V	28A	5V	7mOhm @ 10A, 5V	2.1V @ 5mA	7.6 nC @ 5 V	+6V, -4V	865 pF @ 85 V	-	28W	-40°C ~ 150°C (TJ)	-	-	Surface Mount	3-FCLGA (3.2x2.2)	3-VLGA

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28A Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.