Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedNexperia USA Inc.Rohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)130mA (Ta)170mA (Ta)200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 200mA, 4.5V6Ohm @ 170mA, 10V7.5Ohm @ 50mA, 5V10Ohm @ 130mA, 10V
Vgs(th) (Max) @ Id
800mV @ 1mA2V @ 1mA2V @ 250µA2.5V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
26 pF @ 10 V45 pF @ 25 V50 pF @ 25 V60 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)200mW (Ta)250mW (Tc)350mW (Tc)370mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23-3SOT-323SOT-523SST3TO-236AB
Package / Case
SC-70, SOT-323SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
366,774
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSS84,215
MOSFET P-CH 50V 130MA TO236AB
Nexperia USA Inc.
180,018
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.41963
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
10V
10Ohm @ 130mA, 10V
2V @ 1mA
±20V
45 pF @ 25 V
-
250mW (Tc)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS123W-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
442,654
In Stock
894,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.40266
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-323
2N7002W-7-F
MOSFET N-CH 60V 115MA SOT323
Diodes Incorporated
265,388
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52275
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2V @ 250µA
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-523
2N7002T-7-F
MOSFET N-CH 60V 115MA SOT-523
Diodes Incorporated
107,791
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2V @ 250µA
±20V
50 pF @ 25 V
-
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
7-PDIP Less Pin 6
RYC002N05T316
MOSFET N-CHANNEL 50V 200MA SST3
Rohm Semiconductor
28,170
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66792
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
±8V
26 pF @ 10 V
-
350mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.