Single FETs, MOSFETs

Results: 13
Manufacturer
Infineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyVishay Siliconix
Series
-GigaMOS™, HiPerFET™, TrenchT2™HEXFET®HiPerFET™, Polar3™HiPerFET™, TrenchT2™OptiMOS™TrenchFET®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
Drain to Source Voltage (Vdss)
60 V75 V80 V100 V200 V500 V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)168A (Tc)195A (Tc)209A (Tc)300A (Tc)334A (Tc)340A (Tc)400A (Tc)410A (Tj)465A (Tc)520A (Tc)602A (Tc)860A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 150A, 10V0.85mOhm @ 20A, 10V1.1mOhm @ 100A, 10V1.3mOhm @ 100A, 10V1.6mOhm @ 275A, 10V1.85mOhm @ 195A, 10V2.2mOhm @ 100A, 10V2.3mOhm @ 100A, 10V2.6mOhm @ 60A, 10V3.2mOhm @ 100A, 10V4.5mOhm @ 125A, 10V8.3mOhm @ 60A, 10V43mOhm @ 66A, 10V
Vgs(th) (Max) @ Id
3.3V @ 280µA3.5V @ 250µA3.8V @ 275µA4V @ 12mA4V @ 250µA4V @ 3mA4V @ 8mA5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
231 nC @ 10 V250 nC @ 10 V275 nC @ 10 V287 nC @ 10 V300 nC @ 10 V378 nC @ 10 V420 nC @ 10 V545 nC @ 10 V570 nC @ 10 V620 nC @ 10 V670 nC @ 10 V2100 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 10 V13000 pF @ 25 V16000 pF @ 30 V16070 pF @ 25 V16250 pF @ 40 V18600 pF @ 25 V19000 pF @ 25 V19230 pF @ 50 V24000 pF @ 25 V28000 pF @ 25 V41000 pF @ 25 V60000 pF @ 25 V
Power Dissipation (Max)
375W (Tc)470W (Tc)520W (Tc)600W (Tc)680W (Tc)935W (Tc)1000W (Tc)1250W (Tc)2500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
24-SMPDDE475PG-HSOF-8-1PowerPAK® 8 x 8SP6TO-247ACTO-247AD (IXFH)TO-264AA (IXFK)
Package / Case
6-SMD, Flat Leads8-PowerSFN24-PowerSMD, 21 LeadsPowerPAK® 8 x 8SP6TO-247-3TO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
13Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK_8X8L_Top
SQJQ160E-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
Vishay Siliconix
4,311
In Stock
1 : ¥27.83000
Cut Tape (CT)
2,000 : ¥13.56428
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
602A (Tc)
10V
0.85mOhm @ 20A, 10V
3.5V @ 250µA
275 nC @ 10 V
±20V
16070 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
TO-247-3 AC EP
IRFP2907PBF
MOSFET N-CH 75V 209A TO247AC
Infineon Technologies
2,795
In Stock
1 : ¥44.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
209A (Tc)
10V
4.5mOhm @ 125A, 10V
4V @ 250µA
620 nC @ 10 V
±20V
13000 pF @ 25 V
-
470W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
3,009
In Stock
1 : ¥45.97000
Cut Tape (CT)
2,000 : ¥22.39110
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
410A (Tj)
6V, 10V
1.1mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IPT059N15N3ATMA1
IPT007N06NATMA1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
13,664
In Stock
1 : ¥52.21000
Cut Tape (CT)
2,000 : ¥25.40434
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
MOSFET N-CH 500V 63A 24SMPD
MMIX1F132N50P3
MOSFET N-CH 500V 63A 24SMPD
IXYS
20
In Stock
860
Factory
300 : ¥283.74123
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
63A (Tc)
10V
43mOhm @ 66A, 10V
5V @ 8mA
250 nC @ 10 V
±30V
18600 pF @ 25 V
-
520W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
TO-247_IXFH
IXFH340N075T2
MOSFET N-CH 75V 340A TO247AD
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥87.60000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
340A (Tc)
10V
3.2mOhm @ 100A, 10V
4V @ 3mA
300 nC @ 10 V
±20V
19000 pF @ 25 V
-
935W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
MMIX1F420N10T
MMIX1F420N10T
MOSFET N-CH 100V 334A 24SMPD
IXYS
1
In Stock
440
Factory
1 : ¥396.21000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
334A (Tc)
10V
2.6mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
4700 pF @ 10 V
-
680W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
TO-247_IXFH
IXFH400N075T2
MOSFET N-CH 75V 400A TO247AD
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥127.01000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
400A (Tc)
10V
2.3mOhm @ 100A, 10V
4V @ 250µA
420 nC @ 10 V
±20V
24000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-264
IXFK520N075T2
MOSFET N-CH 75V 520A TO264AA
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥128.57000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
520A (Tc)
10V
2.2mOhm @ 100A, 10V
5V @ 8mA
545 nC @ 10 V
±20V
41000 pF @ 25 V
-
1250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
MOSFET N-CH 200V 168A 24SMPD
MMIX1F230N20T
MOSFET N-CH 200V 168A 24SMPD
IXYS
0
In Stock
Check Lead Time
300 : ¥267.85090
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
168A (Tc)
10V
8.3mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
TO-247-3 AC EP
IRFP4368PBF
MOSFET N-CH 75V 195A TO247AC
Infineon Technologies
0
In Stock
1 : ¥64.69000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
75 V
195A (Tc)
10V
1.85mOhm @ 195A, 10V
4V @ 250µA
570 nC @ 10 V
±20V
19230 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
DE475
IXFZ520N075T2
MOSFET N-CH 75V 465A DE475
IXYS
0
In Stock
1 : ¥362.46000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
465A (Tc)
10V
1.3mOhm @ 100A, 10V
4V @ 8mA
545 nC @ 10 V
±20V
41000 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DE475
6-SMD, Flat Leads
APTM10UM01FAG
APTM10UM01FAG
MOSFET N-CH 100V 860A SP6
Microchip Technology
0
In Stock
Check Lead Time
1 : ¥3,096.98000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
860A (Tc)
10V
1.6mOhm @ 275A, 10V
4V @ 12mA
2100 nC @ 10 V
±30V
60000 pF @ 25 V
-
2500W (Tc)
-40°C ~ 150°C (TJ)
-
-
Chassis Mount
SP6
SP6
Showing
of 13

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.