Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J372R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	154,413 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.62230 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	+12V, -6V	560 pF @ 15 V	-	1W (Ta)	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
TPN2R304PL,L1Q MOSFET N-CH 40V 80A 8TSON Toshiba Semiconductor and Storage	26,447 In Stock	1 : ¥10.75000 Cut Tape (CT) 5,000 : ¥2.63502 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	80A (Tc)	4.5V, 10V	2.3mOhm @ 40A, 10V	2.4V @ 300µA	41 nC @ 10 V	±20V	3600 pF @ 20 V	-	630mW (Ta), 104W (Tc)	175°C	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN
BSZ340N08NS3GATMA1 MOSFET N-CH 80V 6A/23A 8TSDSON Infineon Technologies	43,141 In Stock	1 : ¥6.49000 Cut Tape (CT) 5,000 : ¥2.13660 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	6A (Ta), 23A (Tc)	6V, 10V	34mOhm @ 12A, 10V	3.5V @ 12µA	9.1 nC @ 10 V	±20V	630 pF @ 40 V	-	2.1W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.