Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®TrenchMOS™U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)320mA (Ta)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 15A, 10V1.6Ohm @ 320mA, 10V3.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V0.7 nC @ 4.5 V31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V56 pF @ 10 V1160 pF @ 20 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)320mW (Ta)4.8W (Ta), 41.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-23-3SOT-323
Package / Case
PowerPAK® SO-8SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR426DP-T1-GE3
MOSFET N-CH 40V 30A PPAK SO-8
Vishay Siliconix
40,710
In Stock
1 : ¥8.21000
Cut Tape (CT)
3,000 : ¥3.39552
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
10.5mOhm @ 15A, 10V
2.5V @ 250µA
31 nC @ 10 V
±20V
1160 pF @ 20 V
-
4.8W (Ta), 41.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
463,857
In Stock
1 : ¥1.15000
Cut Tape (CT)
3,000 : ¥0.21578
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS138BKW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
252,143
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.35302
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 320mA, 10V
1.6V @ 250µA
0.7 nC @ 4.5 V
±20V
56 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.