Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
9.9mOhm @ 20A, 10V14mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 4.5 V34 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 30 V2175 pF @ 10 V
Power Dissipation (Max)
1.7W (Ta), 12.5W (Tc)36W (Tc)
Supplier Device Package
DFN2020MD-6PG-TSDSON-8-FL
Package / Case
6-UDFN Exposed Pad8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ099N06LS5ATMA1
MOSFET N-CH 60V 46A TSDSON
Infineon Technologies
19,524
In Stock
1 : ¥7.55000
Cut Tape (CT)
5,000 : ¥2.97945
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
4.5V, 10V
9.9mOhm @ 20A, 10V
2.3V @ 14µA
3.1 nC @ 4.5 V
±20V
1300 pF @ 30 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
6-DFN2020MD_View 2
PMPB10XNEZ
MOSFET N-CH 20V 9A DFN2020MD-6
Nexperia USA Inc.
17,534
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.09951
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
14mOhm @ 9A, 4.5V
900mV @ 250µA
34 nC @ 4.5 V
±12V
2175 pF @ 10 V
-
1.7W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.