Single FETs, MOSFETs
Compare | Mfr Part # | Quantity Available | Price | Series | Package | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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141 In Stock | 1 : ¥169.53000 Tube | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | |||
580 In Stock | 1 : ¥77.34000 Tube | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 22A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 28 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 98W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | |||
461 In Stock | 1 : ¥161.57000 Tube | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | +19V, -8V | 1621 pF @ 600 V | - | 176W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |