Single FETs, MOSFETs

Results: 2
Current - Continuous Drain (Id) @ 25°C
38A (Tc)80A (Tc)
Gate Charge (Qg) (Max) @ Vgs
182 nC @ 10 V189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 25 V5500 pF @ 25 V
Power Dissipation (Max)
45W (Tc)300W (Tc)
Supplier Device Package
TO-220TO-220FP
Package / Case
TO-220-3TO-220-3 Full Pack
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220FP
STP80NF10FP
MOSFET N-CH 100V 38A TO220FP
STMicroelectronics
1,049
In Stock
1 : ¥24.96000
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
38A (Tc)
10V
15mOhm @ 40A, 10V
4V @ 250µA
189 nC @ 10 V
±20V
4300 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220-3
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STMicroelectronics
204
In Stock
1 : ¥25.78000
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
10V
15mOhm @ 40A, 10V
4V @ 250µA
182 nC @ 10 V
±20V
5500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.