Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
OptiMOS™TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)16A (Ta), 100A (Tc)32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 50A, 10V33mOhm @ 10A, 10V72mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 250µA3.5V @ 73µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V150 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V3900 pF @ 40 V4500 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 114W (Tc)8W (Tc)68W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8-5PowerPAK® SO-8SOT-223
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SO-8L
SQJ479EP-T1_GE3
MOSFET P-CH 80V 32A PPAK SO-8
Vishay Siliconix
17,977
In Stock
1 : ¥9.69000
Cut Tape (CT)
3,000 : ¥4.01919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
32A (Tc)
4.5V, 10V
33mOhm @ 10A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
4500 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PG-TDSON-8-5
BSC057N08NS3GATMA1
MOSFET N-CH 80V 16A/100A TDSON
Infineon Technologies
9,241
In Stock
1 : ¥15.76000
Cut Tape (CT)
5,000 : ¥6.83519
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
16A (Ta), 100A (Tc)
6V, 10V
5.7mOhm @ 50A, 10V
3.5V @ 73µA
56 nC @ 10 V
±20V
3900 pF @ 40 V
-
2.5W (Ta), 114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
SOT223
BUK9875-100A/CUX
MOSFET N-CH 100V 7A SOT223
Nexperia USA Inc.
32,646
In Stock
1 : ¥6.81000
Cut Tape (CT)
1,000 : ¥2.90159
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7A (Tc)
4.5V, 10V
72mOhm @ 8A, 10V
2V @ 1mA
-
±10V
1690 pF @ 25 V
-
8W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223
TO-261-4, TO-261AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.