Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
OptiMOS™PowerTrench®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 10A (Tc)46A (Tc)58.3A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
0.92mOhm @ 10A, 10V9.7mOhm @ 40A, 10V16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA3V @ 250µA3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V15 nC @ 10 V122 nC @ 10 V
Vgs (Max)
+12V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 15 V1075 pF @ 30 V6450 pF @ 10 V
Power Dissipation (Max)
2.4W (Ta)2.5W (Ta), 36W (Tc)5W (Ta), 65W (Tc)
Supplier Device Package
6-MicroFET (2x2)PG-TDSON-8-6PowerPAK® 1212-8S
Package / Case
6-WDFN Exposed Pad8-PowerTDFNPowerPAK® 1212-8S
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC097N06NSATMA1
MOSFET N-CH 60V 46A TDSON-8-6
Infineon Technologies
19,021
In Stock
1 : ¥7.47000
Cut Tape (CT)
5,000 : ¥2.94485
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
6V, 10V
9.7mOhm @ 40A, 10V
3.3V @ 14µA
15 nC @ 10 V
±20V
1075 pF @ 30 V
-
2.5W (Ta), 36W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
6-WDFN Exposed Pad
FDMA8878
MOSFET N-CH 30V 9A/10A 6MICROFET
onsemi
9,613
In Stock
1 : ¥13.05000
Cut Tape (CT)
3,000 : ¥5.41568
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
9A (Ta), 10A (Tc)
4.5V, 10V
16mOhm @ 9A, 10V
3V @ 250µA
12 nC @ 10 V
±20V
720 pF @ 15 V
-
2.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-WDFN Exposed Pad
PowerPAK 1212-8S
SISS80DN-T1-GE3
MOSFET N-CH 20V 58.3A/210A PPAK
Vishay Siliconix
11,801
In Stock
1 : ¥9.28000
Cut Tape (CT)
3,000 : ¥5.52090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
58.3A (Ta), 210A (Tc)
2.5V, 10V
0.92mOhm @ 10A, 10V
1.5V @ 250µA
122 nC @ 10 V
+12V, -8V
6450 pF @ 10 V
-
5W (Ta), 65W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.