Single FETs, MOSFETs

Results: 5
Series
CoolMOS™ P6CoolMOS™ P7
Current - Continuous Drain (Id) @ 25°C
23.8A (Tc)26A (Tc)31A (Tc)48A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 15.9A, 10V99mOhm @ 10.5A, 10V120mOhm @ 8.2A, 10V160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 410µA4V @ 530µA4V @ 800µA4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V44 nC @ 10 V45 nC @ 10 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1544 pF @ 400 V1952 pF @ 400 V2080 pF @ 100 V2895 pF @ 400 V
Power Dissipation (Max)
95W (Tc)117W (Tc)164W (Tc)176W (Tc)
Supplier Device Package
PG-TO220-3PG-TO247-3
Package / Case
TO-220-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
5Results
Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO247-3
IPW60R060P7XKSA1
MOSFET N-CH 600V 48A TO247-3
Infineon Technologies
543
In Stock
1 : ¥49.01000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
67 nC @ 10 V
±20V
2895 pF @ 400 V
-
164W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
TO-220-3
IPP60R099P7XKSA1
MOSFET N-CH 600V 31A TO220-3
Infineon Technologies
1,993
In Stock
1 : ¥29.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
31A (Tc)
10V
99mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
-
117W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP60R120P7XKSA1
MOSFET N-CH 600V 26A TO220-3
Infineon Technologies
2,490
In Stock
1 : ¥24.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V
120mOhm @ 8.2A, 10V
4V @ 410µA
36 nC @ 10 V
±20V
1544 pF @ 400 V
-
95W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-TO247-3
IPW60R099P7XKSA1
MOSFET N-CH 600V 31A TO247-3
Infineon Technologies
70
In Stock
1 : ¥36.04000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
31A (Tc)
10V
99mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
-
117W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
AUIRFP4310Z BACK
IPW60R160P6FKSA1
MOSFET N-CH 600V 23.8A TO247-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥24.05000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23.8A (Tc)
10V
160mOhm @ 9A, 10V
4.5V @ 750µA
44 nC @ 10 V
±20V
2080 pF @ 100 V
-
176W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.