Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMN2400UFB-7 MOSFET N-CH 20V 750MA 3DFN Diodes Incorporated	643,008 In Stock 468,000 Factory	1 : ¥2.63000 Cut Tape (CT) 3,000 : ¥0.51311 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.8V, 4.5V	550mOhm @ 600mA, 4.5V	900mV @ 250µA	0.5 nC @ 4.5 V	±12V	36 pF @ 16 V	-	470mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
DMP2045U-7 MOSFET P-CH 20V 4.3A SOT23 Diodes Incorporated	74,819 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.65386 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.3A (Ta)	1.8V, 4.5V	45mOhm @ 4A, 4.5V	1V @ 250µA	6.8 nC @ 4.5 V	±8V	634 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RUE003N02TL MOSFET N-CH 20V 300MA EMT3 Rohm Semiconductor	81,143 In Stock	1 : ¥2.38000 Cut Tape (CT) 3,000 : ¥0.52171 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	300mA (Ta)	1.8V, 4V	1Ohm @ 300mA, 4V	1V @ 1mA	-	±8V	25 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.