Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN61D9UWQ-13 MOSFET N-CH 60V 400MA SOT323 Diodes Incorporated	70,099 In Stock 10,510,000 Factory	1 : ¥2.79000 Cut Tape (CT) 10,000 : ¥0.41708 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	1.8V, 5V	2Ohm @ 50mA, 5V	1V @ 250µA	0.4 nC @ 4.5 V	±20V	28.5 pF @ 30 V	-	440mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-323	SC-70, SOT-323
BSS123W-7-F MOSFET N-CH 100V 170MA SOT323 Diodes Incorporated	442,856 In Stock 963,000 Factory	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.40266 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
NX138BKWX MOSFET N-CH 60V 210MA SOT323 Nexperia USA Inc.	33,875 In Stock	1 : ¥1.72000 Cut Tape (CT) 3,000 : ¥0.29035 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	210mA (Ta)	2.5V, 10V	3.5Ohm @ 200mA, 10V	1.5V @ 250µA	0.7 nC @ 10 V	±20V	20 pF @ 30 V	-	266mW (Ta), 1.33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.