Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTK3043NT1G MOSFET N-CH 20V 210MA SOT723 onsemi	35,443 In Stock	1 : ¥2.79000 Cut Tape (CT) 4,000 : ¥0.50382 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	210mA (Ta)	1.65V, 4.5V	3.4Ohm @ 10mA, 4.5V	1.3V @ 250µA	-	±10V	11 pF @ 10 V	-	310mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-723	SOT-723
NVS4001NT1G MOSFET N-CH 30V 270MA SC70-3 onsemi	59,184 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.69165 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	270mA (Ta)	2.5V, 4V	1.5Ohm @ 10mA, 4V	1.5V @ 100µA	1.3 nC @ 5 V	±20V	33 pF @ 5 V	-	330mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
FDMS6673BZ MOSFET P-CH 30V 15.2A/28A 8PQFN onsemi	10,344 In Stock 48,000 Factory	1 : ¥16.42000 Cut Tape (CT) 3,000 : ¥7.38891 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	15.2A (Ta), 28A (Tc)	4.5V, 10V	6.8mOhm @ 15.2A, 10V	3V @ 250µA	130 nC @ 10 V	±25V	5915 pF @ 15 V	-	2.5W (Ta), 73W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.