Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon Technologiesonsemi
Series
HEXFET®OptiMOS™PowerTrench®QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V100 V250 V400 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)4.4A (Ta), 15A (Tc)4.5A (Tc)61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V6V, 10V10V
Rds On (Max) @ Id, Vgs
22mOhm @ 61A, 10V50mOhm @ 4.3A, 4.5V67mOhm @ 4.4A, 10V1Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
950mV @ 250µA4V @ 250µA4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V20 nC @ 10 V22 nC @ 10 V86 nC @ 10 V
Vgs (Max)
±8V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
625 pF @ 25 V830 pF @ 10 V1335 pF @ 50 V7076 pF @ 125 V
Power Dissipation (Max)
1.3W (Ta)2.3W (Ta), 40W (Tc)2.5W (Ta), 48W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-MLP (3.3x3.3)Micro3™/SOT-23PG-TO220-3TO-252AA
Package / Case
8-PowerWDFNTO-220-3TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
Infineon Technologies
110,422
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
1.8V, 4.5V
50mOhm @ 4.3A, 4.5V
950mV @ 250µA
15 nC @ 5 V
±8V
830 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
8-MLP, Power33
FDMC86139P
MOSFET P-CH 100V 4.4A/15A 8MLP
onsemi
11,158
In Stock
1 : ¥14.29000
Cut Tape (CT)
3,000 : ¥6.43829
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
4.4A (Ta), 15A (Tc)
6V, 10V
67mOhm @ 4.4A, 10V
4V @ 250µA
22 nC @ 10 V
±25V
1335 pF @ 50 V
-
2.3W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
TO-252AA
FQD6N40CTM
MOSFET N-CH 400V 4.5A DPAK
onsemi
800
In Stock
1 : ¥11.00000
Cut Tape (CT)
2,500 : ¥4.56587
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
4.5A (Tc)
10V
1Ohm @ 2.25A, 10V
4V @ 250µA
20 nC @ 10 V
±30V
625 pF @ 25 V
-
2.5W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
IPP220N25NFDAKSA1
MOSFET N-CH 250V 61A TO220-3
Infineon Technologies
903
In Stock
1 : ¥49.34000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
61A (Tc)
10V
22mOhm @ 61A, 10V
4V @ 270µA
86 nC @ 10 V
±20V
7076 pF @ 125 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.